G50N60RUFD IGBT Transistors 600V 50A TO-264

Description

G50N60RUFD IGBT Transistors 600V 50A TO-264 The G50N60RUFD, corresponding to the SGL50N60RUFD device in the supplied datasheet, is a 600 V, 50 A short-circuit-rated Insulated Gate Bipolar Transistor designed for high-power switching applications. It combines low conduction and switching losses with short-circuit ruggedness, making it suitable for power electronic circuits where reliable switching of high voltages and currents is required. The device has a high input impedance and supports high-speed switching operation. This IGBT is designed for applications such as motor control, uninterruptible power supplies, and general inverters. It provides a 600 V collector-emitter voltage rating, a 50 A collector current rating at a 100°C case temperature, and a 150 A pulsed collector current rating. The device also includes an integrated diode and has a short-circuit withstand time of 10 µs at 100°C case temperature. Features: High-voltage IGBT design. Short-circuit ruggedness. High-speed switching. Low conduction and switching losses. High input impedance. Integrated freewheeling diode. Suitable for high-power switching circuits. Designed for motor control, UPS, and inverter applications. Specifications: Parameter Value Part Number G50N60RUFD Device Type IGBT Package TO-264, 3 Lead Collector-Emitter Voltage (VCES) 600 V Gate-Emitter Voltage (VGES) ±20 V Collector Current @ TC = 25°C 80 A Collector Current @ TC = 100°C 50 A Pulsed Collector Current (ICM) 150 A Collector-Emitter Saturation Voltage 2.2 V @ 50 A, 15 V gate drive Gate-Emitter Threshold Voltage 5.0–8.5 V Short-Circuit Withstand Time 10 µs @ 100°C Maximum Power Dissipation @ TC = 25°C 250 W Maximum Power Dissipation @ TC = 100°C 100 W Operating Junction Temperature -55 to +150°C Storage Temperature -55 to +150°C IGBT Junction-to-Case Thermal Resistance 0.5°C/W Diode Junction-to-Case Thermal Resistance 1.0°C/W Input Capacitance 3311 pF Output Capacitance 399 pF Reverse Transfer Capacitance 139 pF Total Gate Charge 145 nC Gate-Emitter Charge 25 nC Gate-Collector Charge 70 nC Turn-On Delay Time 26 ns @ 25°C Rise Time 89 ns @ 25°C Turn-Off Delay Time 66 ns @ 25°C Fall Time 118 ns @ 25°C Diode Forward Voltage 1.9 V @ 30 A, 25°C Manufacturer Fairchild Semiconductor Pinout: Pin Name Function 1 Gate (G) Controls IGBT switching 2 Collector (C) High-current collector terminal 3 Emitter (E) Emitter/current return terminal Applications: Motor control. Uninterruptible Power Supplies (UPS). General-purpose inverters. High-power switching circuits. Power conversion circuits. Industrial inverter systems. Packages Included: 1x G50N60RUFD IGBT Transistors 600V 50A TO-264. Documents: G50N60RUFD Datasheet.

From the supplier's page.