2SD1427 NPN Power Transistor TO-3PH

Description

2SD1427 NPN Power Transistor TO-3PH The 2SD1427 is a high-voltage silicon NPN power transistor housed in a TO-3PH package, engineered for demanding deflection and high-speed switching duties. It incorporates a built-in damper diode and is optimized to withstand substantial collector-base and collector-emitter voltages while responding quickly to switching transients. The device is intended for applications where reliable performance under heavy electrical stress is required. Mechanically robust and thermally considerate, the transistor’s collector is connected to the mounting base to promote efficient heat transfer to the chassis or heatsink. Its construction emphasizes low collector-emitter saturation under load and durable operation at elevated junction temperatures, supporting secure mounting and dependable thermal handling in power assemblies. With high breakdown voltage capability, significant power dissipation rating, and conservative thermal design, the 2SD1427 sustains stable operation in large-screen deflection and other high-voltage roles. The integrated damper diode and optimized switching characteristics reduce risk during transients, improving longevity and system reliability for high-stress power circuits. Features: TO-3PH package with collector tied to mounting base. Built-in damper (flyback) diode. High voltage capability and high-speed switching design. Low collector–emitter saturation characteristic under load. Robust thermal handling and mechanical mounting compatibility. Designed for reliable operation in high-stress transient environments. Specifications: Parameter / Test Value / Condition VCBO (Collector-base): 1500 V VCEO (Collector-emitter): 600 V VEBO (Emitter-base): 5 V IC (Collector current): 5 A IB (Base current): 2.5 A PD (Power dissipation, TC=25°C): 80 W Tj (Max junction temp): 150 °C Tstg (Storage temp): -55 to 150 °C Rth j-C (Thermal resistance): 1.56 °C/W VCE(sat): 5.0 V (IC=4A; IB=0.8A) VBE(sat): 1.5 V (IC=4A; IB=0.8A) ICBO (IC cut-off): 10 µA (VCB=500V) hFE (DC current gain): 8 (IC=1A; VCE=5V) fT (Transition freq.): 3 MHz (IC=0.1A; VCE=10V; f=1MHz) Cobo (Output capacitance): 165 pF (IE=0; VCB=10V; f=1MHz) Diode VF: 2.0 V (IF=5A) tf (Fall time): 1.0 µs (IC=4A; IB1=0.8A) Source: device datasheet. 2SD1427 Applications: Large-screen color deflection circuits Package Contents: 1x 2SD1427 NPN Power Transistor TO-3PH Datasheet

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