MPF20N60 MOSFET Transistor N-Channel 600V 20A TO-220F

Description

MPF20N60 MOSFET Transistor N-Channel 600V 20A TO-220F The MPF20N60 MOSFET Transistor N-Channel 600V 20A TO-220F is an N-Channel enhancement mode power MOSFET designed for high voltage switching applications. It features a drain-source voltage rating of 600V and a continuous drain current capacity of 20A. The device is built using advanced planar stripe and DMOS technology for robust performance. It offers low on-resistance, fast switching capability, and low gate charge, which contributes to high efficiency and reduced conduction losses in power supply circuits. Packaged in a TO-220 form factor, the MPF20N60 is suitable for use in solar inverters, AC-DC power supplies, and other industrial power applications, ensuring reliable operation with a maximum junction temperature of 150°C. The transistor is widely used in switching power supplies, adaptors, and chargers where high voltage and current handling are required. Features: High Voltage and Current Ratings It has a drain-source voltage of 600V and can handle a continuous drain current of 20A. Technology Utilizes advanced planar stripe and DMOS technology for improved performance. Low On-Resistance Typical RDS(on) around 150 milliohms, enabling efficient conduction. Fast Switching Designed for high-speed switching applications with low gate charge (~75 nC) and low output capacitance (~165 pF). Thermal Performance Capable of operating at junction temperatures up to 150°C with a thermal resistance of about 0.6°C/W from junction to case. Packaging Comes in a TO-220 package, suitable for efficient heat dissipation. Application Suitability Ideal for power supply, inverter, and industrial power applications due to its high voltage, high current capacity, and low switching losses. Pinout Configuration: Specifications: Parameter Value Unit Notes / Conditions Part Number MPF20N60 — Package Type TO-220F — Fullpack, 3 Lead Package Drain-Source Voltage (V_DSS) 600 V Maximum Drain-Source Voltage Continuous Drain Current (I_D) 20 A At TC=25∘CT_C=25^\circ C TC =25∘C Power Dissipation (P_D) 86 W MIRACLE POWER rating RDS(on) @ 10V Gate Voltage 450 mΩ Typical on-resistance Gate Threshold Voltage (V_GS(th)) 4 V At 250 µA Type N-Channel — Reverse Transfer Capacitance (C_rss) 25 pF At specified V_DS Output Capacitance (C_oss) 260 pF Input Capacitance (C_iss) 2.8 nF Operating Junction Temperature Range -55 ~ +150 °C Gate Charge (Q_g) 53.5 nC At 10V Applications: Power Factor Correction (PFC) circuits in switching power supplies. Server and Telecom power supply designs. Flat Panel Display (FPD) TV power regulators. ATX power supplies for personal computers. Industrial power control systems. Solar inverter circuits. AC to DC power converters. Switching regulators and high-efficiency power conversion. Motor control drives and inverters. General purpose high voltage, high current switching applications. Package Contents: 1 x MPF20N60 MOSFET Transistor N-Channel 600V 20A TO-220F Datasheet: MPF20N60

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