BD138 PNP Power Transistor 60V 1.5A TO-126

Description

BD138 PNP Power Transistor 60V 1.5A TO-126 The BD138 is a robust PNP silicon epitaxial planar bipolar junction transistor (BJT) designed for medium-power linear and switching applications. It is housed in a standard TO-126 through-hole plastic package that supports reliable thermal performance and ease of handling in prototypes and production circuits. The device features a maximum collector-emitter voltage of 60 V, continuous collector current of 1.5 A, and moderate power dissipation, making it suitable for general amplifier, driver, and switching applications. Features: PNP epitaxial silicon construction for high reliability. Medium power handling with 1.5A continuous collector current. Low collector-emitter saturation voltage for efficient switching. Wide DC current gain (hFE) range from 40 to 250. Specifications: Parameter Value Collector-Base Voltage (VCBO) -60V Collector-Emitter Voltage (VCEO) -60V Emitter-Base Voltage (VEBO) -5V Collector Current (IC, Continuous) -1.5A Collector Current (IC, Pulsed) -3A Base Current (IB) -0.5A Power Dissipation (PC at TC=25°C) 12.5W Power Dissipation (PC at TA=25°C) 1.25W DC Current Gain (hFE at IC=-150mA, VCE=-2V) 40 to 250 Collector-Emitter Saturation Voltage (VCE(sat) at IC=-500mA, IB=-50mA) -0.5V Base-Emitter On Voltage (VBE(on) at IC=-500mA, VCE=-2V) -1V Operating Junction Temperature (TJ) -55°C to 150°C Package Type TO-126 Mounting Type Through Hole Pin Configuration: Applications: Driver stages in hi-fi audio amplifiers. Medium power switching in power supplies. General-purpose amplification in consumer electronics. Complementary push-pull configurations with NPN transistors. Television circuit drivers and regulators. Linear voltage regulation in low-power systems. Package Include: 1x BD138 PNP Power Transistor 60V 1.5A TO-126 Datasheet: BD138

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