MLG60T65FUK 60T65 60A 650V TO-247 IGBT transistor

Description

MLG60T65FUK 60T65 60A 650V TO-247 IGBT transistor The MLG60T65FUK is a high-power IGBT built using advanced Trench Field Stop (T-FS) technology to combine low saturation voltage with optimized switching behavior. Packaged in familiar through-hole formats (TO-247 / TO-3PF / TO-3PN), it delivers strong conduction for high-current loads while keeping conduction losses low helpful where efficiency and thermal budget matter. Designed for hard-working power stages, the device supports sustained collector current and high pulsed capability, and includes a fast-recovery anti-parallel diode for resilient commutation. Gate charge is kept moderate for reduced drive requirements, and the positive temperature coefficient improves paralleling behavior in multi-device arrangements. With a 650 V collector-emitter rating and 60 A continuous capability (at elevated case temperature ratings shown in the datasheet), the MLG60T65FUK is suited to medium-voltage converters where ruggedness, predictable switching losses and straightforward heatsinking (TO-247 style) are priorities. The datasheet also supplies detailed safe-operating area and thermal data to aid reliable design. Features: Fast switching Low VCE(sat). Positive temperature coefficient. Fast recovery anti-parallel diode. RoHS compliant product. Specifications: Parameter Symbol / Condition Value Unit Collector-Emitter Voltage (Breakdown) VCES, VGE = 0 V, IC = 250 µA 650 V Collector Continuous Current @ TC = 25°C IC 120 A Collector Continuous Current @ TC = 100°C IC 60 A Pulsed Collector Current (tp limited by TJmax) ICM 240 A Pulsed Short-Circuit Collector Current (tSC ≤ 5 µs) IC(SC) 250 A Diode Continuous Forward Current @ TC = 25°C IF 120 A Diode Continuous Forward Current @ TC = 100°C IF 60 A Diode Peak Forward Current (limited by TJmax) IFM 240 A Gate-Emitter Voltage (rated) VGES ±30 V Power Dissipation @ TC = 25°C (TO-3PN / TO-247) PD 375 W Power Dissipation @ TC = 25°C (TO-3PF) PD 62.5 W Operating Junction & Storage Temperature Range TJ, Tstg -55 to +175 °C Thermal Resistance, Junction-to-Case (IGBT, TO-3PN / TO-247) RθJC 0.4 °C/W Thermal Resistance, Junction-to-Case (IGBT, TO-3PF) RθJC 2.4 °C/W Thermal Resistance, Junction-to-Case (Diode, TO-3PN / TO-247) RθJC (diode) 0.75 °C/W Thermal Resistance, Junction-to-Case (Diode, TO-3PF) RθJC (diode) 1.88 °C/W Thermal Resistance, Junction-to-Ambient RθJA 40 °C/W Collector-Emitter Saturation Voltage @ VGE = 15 V, IC = 60 A VCE(sat) (TJ = 25°C / 125°C / 175°C) 1.70 / 2.10 / 2.30 V Gate Threshold Voltage (VCE = VGE, IC = 1 mA) VGE(th) 4.7 – 6.2 (typ. 5.5) V Collector-Emitter Leakage Current @ VCE = 650 V, VGE = 0 V ICES 25 µA Diode Forward Voltage @ IF = 60 A (TJ = 25°C / 125°C / 175°C) VF 2.30 / 2.00 / 1.85 V Input Capacitance (VGE = 0 V, VCE = 25 V, f = 1 MHz) Ciss 3036 pF Gate Charge (VCC = 520 V, IC = 60 A, VGE = 15 V) QG 137 nC Turn-on Delay Time (IC = 60 A, VCE = 400 V, VGE = 15 V, RG = 5 Ω) td(on) 37 ns Turn-off Delay Time (same conditions) td(off) 130 ns Turn-on Switching Loss (IC = 60 A, VCE = 400 V) Eon 1.39 mJ Turn-off Switching Loss (IC = 60 A, VCE = 400 V) Eoff 1.06 mJ Diode Reverse Recovery Time (IF = 30 A, di/dt = 200 A/µs, TJ = 25°C) trr 52 ns Diode Reverse Recovery Charge (IF = 30 A, TJ = 25°C) Qrr 62 nC Package Type — TO-247 / TO-3PF / TO-3PN — Compliance — RoHS Compliant — Pinout Diagram: Footprint Diagram: Applications: Photovoltaic converters. UPS. Boost. Package Contents: 1x MLG60T65FUK 60T65 60A 650V TO-247 IGBT transistor Datasheet

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