FQA23N50
FQA23N50 N-Channel MOSFET Transistor 500V 23A TO-3P
EGP 40
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Pinout: Specifications: Type Designator: FQA23N50 Type of Transistor: MOSFET Type of Control Channel: N -Channel Pd – Maximum Power Dissipation: 290 W |Vds| – Maximum Drain-Source Voltage: 500 V |Vgs| – Maximum Gate-Source Voltage: 30 V |Vgs(th)| – Maximum Gate-Threshold Voltage: 5 V |Id| – Maximum Drain Current: 23 A Tj – Maximum Junction Temperature: 150 °C Qg – Total Gate Charge: 90 nC Rds – Maximum Drain-Source On-State Resistance: 0.2 Ohm Package: TO-3P
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