PUMD12,135 Dt1 80@5mA,5V 1 NPN,1 PNP – Pre-Biased 300mW 100mA 50V 1uA TSSOP-6 Digital Transistor
EGP 5
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Features and benefits 100 mA output current capability Built-in bias resistors Simplified circuit design Reduces component count Reduces pick and place costs Specifications Attribute Value Category Triode/MOS Tube/Transistor/Digital Transistors Datasheet Nexperia PUMD12,135 Package TSSOP-6 (SOT363) DC Current Gain (hFE@Ic,Vce) 80@5mA,5V Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 150mV@500uA,10mA Transistor Type 1 NPN,1 PNP – Pre-Biased Transition Frequency (fT) 230MHz;180MHz Power Dissipation (Pd) 300mW Collector Current (Ic) 100mA Collector-Emitter Breakdown Voltage (Vceo) 50V Collector Cut-Off Current (Icbo) 1uA Applications Low current peripheral driver Controlling IC inputs Replacement of general purpose transistors in digital applications Nexperia PUMD12,135
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