IRF840 N-Channel MOSFET 8A 500V 0.85Ω TO-220AB

Description

IRF840 N-Channel MOSFET 8A 500V 0.85Ω TO-220AB The IRF840 is a robust N-channel power MOSFET presented in a TO-220AB through-hole package. It reads as a purpose-built switching device: compact, solid, and engineered to sit on a heatsink while handling substantial voltages. The package and lead layout give immediate confidence that the part is intended for high-voltage switching tasks where thermal management and mechanical stability matter. Handling the IRF840 in a circuit, you notice it is built for duty – capable of standing off high drain-to-source voltages and switching quickly. The die and package balance ruggedness with reasonably fast transitions, so it feels like a pragmatic choice for designers who need a dependable, conventional MOSFET rather than an ultra-low-RDS(on) logic-level device. On the board, the IRF840 functions as a clear building block for mid-power converters and inverters: it brings predictable switching behavior, a noticeable body diode character, and established thermal performance. Its overall presence suggests a component chosen for reliability and familiarity in power-electronic designs. Features N-Channel Power MOSFET Continuous Drain Current (ID): 8A The gate threshold voltage (VGS-th) is 10V (limit = ±20V) Drain to Source Breakdown Voltage: 500V Drain Source Resistance (RDS) is 0.85 Ohms Rise time and fall time is 23nS and 20nS Available in To-220 package Specifications Specification Value / Notes Part / Package: IRF840 — N-Channel MOSFET, TO-220AB Drain-Source Voltage (VDS): 500 V Gate-Source Voltage (VGS): ±20 V (max) Continuous Drain Current (ID): 8.0 A (TC = 25 °C); 5.1 A (TC = 100 °C) Pulsed Drain Current (IDM): 32 A (pulse) Drain-Source On-Resistance RDS(on): 0.85 Ω (VGS = 10 V, ID = 4.8 A) Gate-Source Threshold VGS(th): 2.0 – 4.0 V (ID = 250 µA) Maximum Power Dissipation (TC = 25 °C): 125 W Single Pulse Avalanche Energy (EAS): 510 mJ Peak Diode dV/dt: 3.5 V/ns Total Gate Charge Qg (VGS = 10 V): Max 63 nC (Qgs 9.3 nC, Qgd 32 nC) Input Capacitance Ciss (f = 1 MHz): ≈ 1300 pF Coss / Crss: ≈ 310 pF / 120 pF Switching (typ.) td(on) / tr / td(off) / tf: 14 ns / 23 ns / 49 ns / 20 ns (test conditions apply) Body diode continuous current / pulsed: 8.0 A / 32 A (pulsed) Body diode reverse recovery trr: Typ 460 ns, Max 970 ns Operating / Storage Temp: TJ: −55 to +150 °C Thermal Resistance RthJC / RthCS: RthJC ≈ 1.0 °C/W ; RthCS ≈ 0.50 °C/W Mounting / Soldering: Mounting torque and solder peak: see datasheet (solder peak 300 °C, 10 s) IRF840 N-Channel Power Mosfet IRF840 Pinout The IRF840 is an N-Channel Power MOSFET that can switch loads up to 500V. The Mosfet could switch loads that consume up to 8A, it can turned on by providing a gate threshold voltage of 10V across the Gate and Source pin. Pin Configuration Pin Number Pin Name Description 1 Source Current flows out through Source (maximum 8A) 2 Gate Controls the biasing of the MOSFET (Threshold voltage 10V) 3 Drain Current flows in through Drain Footprint Diagram Applications Switching high-power devices Inverter Circuits DC-DC Converters Control the speed of motors LED dimmers or flashers High-Speed switching applications Package Contents 1x IRF840 N-Channel MOSFET 8A 500V 0.85Ω TO-220AB IRF840 Datasheet

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