93C56EN 2K-Bit Serial CMOS EEPROM 5V 400µA PDIP-8

Description

93C56EN 2K-Bit Serial CMOS EEPROM 5V 400µA PDIP-8 The 93C56EN is a 2048‑bit CMOS electrically erasable programmable memory (EEPROM) organized as 128 × 16‑bit registers, fabricated on floating‑gate CMOS process for high speed and low power. It operates from a single 5 V supply, since VPP is generated on‑board. The serial MICROWIRE‑compatible interface (instruction, address and write data on the Data‑In pin; read data and device status on the Data‑Out pin) allows simple interfacing to standard microcontrollers and microprocessors and saves board space in the 8‑pin DIP package. Features 2048 bits of CMOS EEPROM, organized as 128 × 16‑bit registers Typical active current 400 µA; typical standby current 25 µA Reliable CMOS floating‑gate technology 5 V‑only operation in all modes (VPP generated on‑board) MICROWIRE‑compatible serial I/O Self‑timed programming cycle with device status signal during programming Sequential register read Over 40 years data retention Designed for 100,000 write cycles Shipped erased (all bits = logical 1’s) Specifications General Specifications Parameter Specification Device Type Serial CMOS EEPROM (Electrically Erasable Programmable Memory) Memory Density 2048 bits Organization 128 registers × 16 bits (address bit A7 = “don’t care”) Serial Interface MICROWIRE compatible (CS, SK, DI, DO) Supply Voltage (V CC ) 5 V nominal; 4.5 V to 5.5 V operating (V PP generated on-board; 5 V-only operation in all modes) Package 8-Pin Dual-In-Line (DIP), NS Package Number N08E Ambient Operating Temperature −40°C to +85°C (Extended Temperature Range) Instruction Set (7) READ, EWEN, ERASE, ERAL, WRITE, WRAL, EWDS Data Retention Over 40 years Write Endurance Designed for 100,000 write cycles DC Electrical Characteristics (V CC = 5 V ±10%) Symbol Parameter Conditions Min Max Units — Typical Active Current — — 400 (typ) µA — Typical Standby Current — — 25 (typ) µA I CC1 Operating Current (CMOS Input Levels) CS = V IH , SK = 0.5 MHz — 2 mA I CC2 Operating Current (TTL Input Levels) CS = V IH , SK = 0.5 MHz — 3 mA I CC3 Standby Current CS = 0 V — 100 µA I L Input Leakage V IN = 0 V to V CC −10 10 µA I OL Output Leakage V IN = 0 V to V CC −10 10 µA V IL Input Low Voltage — −0.1 0.8 V V IH Input High Voltage — 2 V CC +1 V V OL1 Output Low Voltage I OL = 2.1 mA — 0.4 V V OH1 Output High Voltage I OH = 400 µA 2.4 — V V OL2 Output Low Voltage I OL = 10 µA — 0.2 V V OH2 Output High Voltage I OH = −10 µA V CC −0.2 — V AC Electrical Characteristics / Timing (V CC = 5 V ±10%) Symbol Parameter Conditions Min Max Units f SK SK Clock Frequency — 0 0.5 MHz — Minimum SK Clock Period Note 3 2 — µs t SKH SK High Time Note 3 500 — ns t SKL SK Low Time Note 3 500 — ns t CS Minimum CS Low Time Note 5 500 — ns t CSS CS Setup Time Relative to SK 100 — ns t CSH CS Hold Time Relative to SK 0 — ns t DIS DI Setup Time Relative to SK 200 — ns t DIH DI Hold Time Relative to SK 200 — ns t PD1 Output Delay to “1” AC Test — 1000 ns t PD0 Output Delay to “0” AC Test — 1000 ns t SV CS to Status Valid AC Test — 1000 ns t DF CS to DO in TRI-STATE AC Test, CS = V IL — 200 ns t WP Write Cycle Time — — 10 ms Capacitance (T A = 25°C, f = 1 MHz) Symbol Parameter Max Units C IN Input Capacitance 5 pF C OUT Output Capacitance 5 pF AC Test Conditions Parameter Condition Output Load 1 TTL Gate and C L = 100 pF Input Pulse Levels 0.4 V to 2.4 V Timing Measurement Reference Level — Input 1 V and 2 V Timing Measurement Reference Level — Output 0.8 V and 2 V Absolute Maximum Ratings Parameter Rating Ambient Storage Temperature −65°C to +150°C All Input or Output Voltages with Respect to Ground −0.3 V to +6.5 V Lead Temperature (Soldering, 10 sec.) +300°C ESD Rating 2000 V Applications Microcontroller/Microprocessor Data Storage Space-Constrained Circuit Boards Low-Power & Portable Electronics Legacy System Upgrades & Replacements Industrial & Harsh-Environment Equipment Package Content 1 x 93C56EN 2K-Bit Serial CMOS EEPROM 5V 400µA PDIP-8 DataSheet 93C56EN

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