2SK2248 N-Channel SMD MOSFET Transistor 30V 70A TO-252

Description

2SK2248 N-Channel SMD MOSFET Transistor 30V 70A TO-252 The 2SK2248 is a high-performance N-Channel MOSFET . Enclosed in a compact TO-252 surface-mount package, it delivers excellent efficiency with extremely low on-resistance and reliable thermal management . It features an advanced N-Channel configuration optimized for demanding power-delivery circuitry . Features Trench Power MOSFET Technology Low On-Resistance Rigorous Testing Environmental Standards Specifications Key Product Summary Parameter Symbol Value / Condition Unit Drain-Source Voltage V DS 30 V Drain-Source On-State Resistance R DS(on) 0.007 @ V GS = 10 V 0.009 @ V GS = 4.5 V Ω Continuous Drain Current I D 70 @ V GS = 10 V 60 @ V GS = 4.5 V A Total Gate Charge (Typical) Q g 25 nC Absolute Maximum Ratings ( T A = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS 30 V Gate-Source Voltage V GS ±20 Continuous Drain Current ( T J = 175 °C) I D 70 ( T C = 25 °C) 50 ( T C = 70 °C) A Continuous Source-Drain Diode Current I S 50 a,e ( T C = 25 °C) 3.13 b,c ( T A = 25 °C) Pulsed Drain Current I DM 200 Avalanche Current Pulse I AS 39 Single Pulse Avalanche Energy ( L = 0.1 mH) E AS 94.8 mJ Maximum Power Dissipation P D 75 ( T C = 25 °C) 3.25 b,c ( T A = 25 °C) 2.33 b,c ( T A = 70 °C) W Operating Junction and Storage Temperature Range T J , T stg -55 to 175 °C Thermal Resistance Ratings Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambient b,c,d ( t ≤ 10 sec) R thJA 32 40 °C/W Maximum Junction-to-Case (Steady State) R thJC 0.5 0.6 Electrical Specifications ( T J = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage V DS V GS = 0 V, I D = 250 μA 30 V V DS Temperature Coefficient ΔV DS /T J I D = 250 μA 35 mV/°C Temperature Coefficient V GS(th) ΔV GS(th) /T J -7.5 Gate-Source Threshold Voltage V GS(th) V DS = V GS , I D = 250 μA 1.5 2.0 2.5 V Gate-Source Leakage I GSS V DS = 0 V, V GS = ±20 V ±100 nA Zero Gate Voltage Drain Current I DSS V DS = 30 V, V GS = 0 V 1 μA On-State Drain Current a I D(on) V DS ≥ 5 V, V GS = 10 V 90 A Drain-Source On-State Resistance a R DS(on) V GS = 10 V, I D = 21.8 A V GS = 4.5 V, I D = 18 A 0.007 0.009 Ω Forward Transconductance a g fs V DS = 15 V, I D = 21.8 A 160 S Dynamic Characteristics b Input Capacitance C iss V DS = 15 V, V GS = 0 V, f = 1 MHz 2201 pF Output Capacitance C oss 525 Reverse Transfer Capacitance C rss 370 Total Gate Charge Q g V DS = 15 V, V GS = 10 V, I D = 21.8 A 35 45 nC Total Gate Charge Q g V DS = 15 V, V GS = 4.5 V, I D = 21.8 A 25 35 Gate-Source Charge Q gs 15 Gate-Drain Charge Q gd 20 Gate Resistance R g f = 1 MHz 1.4 2.1 Ω Switching Characteristics b (V GEN = 10 V) Turn-On Delay Time t d(on) V DD = 15 V, R L = 0.625 Ω I D ≅ 24 A, R g = 1 Ω 18 27 ns Rise Time t r 11 17 Turn-Off Delay Time t d(off) 70 105 Fall Time t f 10 15 Switching Characteristics b (V GEN = 4.5 V) Turn-On Delay Time t d(on) V DD = 15 V, R L = 0.67 Ω I D ≅ 22.5 A, R g = 1 Ω 55 83 Rise Time t r 180 270 Turn-Off Delay Time t d(off) 55 83 Fall Time t f 12 18 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I S T C = 25 °C 120 A Pulse Diode Forward Current a I SM 120 Body Diode Voltage V SD I S = 22 A, V GS = 0 V 0.8 1.2 V Body Diode Reverse Recovery Time t rr I F = 20 A, di/dt = 100 A/μs, T J = 25 °C 52 78 ns Body Diode Reverse Recovery Charge Q rr 70.2 105 nC Reverse Recovery Fall Time t a 27 ns Reverse Recovery Rise Time t b 25 Applications OR-ing functionality Server power systems DC/DC converters Package Content 1 x 2SK2248 N-Channel SMD MOSFET Transistor 30V 70A TO-252 DataSheet 2SK2248

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