FQP14N60 MOSFET Transistor 600V 14A TO-220

Description

FQP14N60 MOSFET Transistor The FQP14N60 is a robust N-channel power MOSFET designed for high-voltage switching applications. It is part of the Littelfuse Polar™ HiPerFET™ family, which features high break-down voltage, low on-state resistance, and strong avalanche ruggedness. The device delivers reliable performance in demanding power conversion roles such as SMPS (switch-mode power supplies), DC-DC converters, battery chargers, and motor drives. Features: Low on-state resistance (R_DS(on) ≤ 550mΩ) for reduced conduction losses. Low gate charge (Q_G = 36nC) for faster switching and lower drive power. Avalanche rated with E_AS = 900mJ for enhanced ruggedness. High power dissipation capability up to 300W. Specifications: Parameter Value Drain-Source Voltage (V_DSS) 600V Continuous Drain Current (I_D at 25°C) 14A Pulsed Drain Current (I_DM) 42A On-State Resistance (R_DS(on)) 550mΩ Gate-Source Voltage (V_GSS) ±30V Gate Threshold Voltage (V_GS(th)) 3V to 5.5V Power Dissipation (P_D) 300W Avalanche Energy (E_AS) 900mJ Operating Temperature Range -55°C to 150°C Input Capacitance (C_iss) 2500pF Output Capacitance (C_oss) 215pF Reverse Transfer Capacitance (C_rss) 13pF Turn-On Delay Time (t_d(on)) 23ns Turn-Off Delay Time (t_d(off)) 70ns Total Gate Charge (Q_g) 36nC Pin Configuration: Applications: Switch-mode and resonant-mode power supplies. DC-DC converters for efficient voltage transformation. Power Factor Correction (PFC) circuits in AC-DC systems. AC and DC motor drives for industrial automation. Robotics and servo controls requiring precise power handling. High-voltage switching in consumer electronics and appliances. Package Include: 1x FQP14N60 MOSFET Transistor. Datasheet: 14N60

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