FGH40N60 IGBT Transistors 600V, 80A Field Stop IGBT TO-247
EGP 70
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Description Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. Features Maximum Junction Temperature : TJ = 175°C Positive Temperature Coefficient for Easy Parallel Operating High Current Capability Low Saturation Voltage: VCE(sat) = 1.9 V (Typ) @ IC = 40 A High Input Impedance Fast Switching: EOFF = 6.5 J/A Tighten Parameter Distribution This Device is Pb−Free, Halogen Free/BFR Free and is RoHS Compliant Applications Solar Inverter, Welder, UPS, PFC, Telecom, ESS Specifications Product Attribute Attribute Value Product Category: IGBT Transistors Technology: Si Package/Case: TO-247 Mounting Style: Through Hole Configuration: Single Collector- Emitter Voltage VCEO Max: 600 V Collector-Emitter Saturation Voltage: 1.9 V Maximum Gate Emitter Voltage: – 20 V, 20 V Continuous Collector Current at 25 C: 80 A Pd – Power Dissipation: 349 W Minimum Operating Temperature: – 55 C Maximum Operating Temperature: + 150 C Gate-Emitter Leakage Current: +/- 400 nA Product Type: IGBT Transistors FGH40N60 Datasheet
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