H25T120 IGBT MOSFET 1200V 25A TO-247AC

Description

H25T120 IGBT MOSFET 1200V 25A TO-247AC The H25T120 is a high-voltage Insulated Gate Bipolar Transistor (IGBT) designed for power-switching applications where high blocking voltage and controlled switching are required. It combines the voltage-control characteristics of a MOSFET gate with the high-current conduction capability of an IGBT, making it suitable for power conversion and switching stages. The TO-247AC package provides a robust through-hole format suitable for power electronics assemblies and can be mounted with a suitable heatsink for thermal management. The device can be used in inverter stages, motor control circuits, switching power supplies, induction heating equipment, and other applications requiring high-voltage power switching. Features: IGBT power-switching technology. Insulated gate for voltage-controlled operation. Suitable for high-power switching circuits. Through-hole power package. Suitable for use with external heatsinking. Designed for inverter and power-conversion applications. Specifications: Parameter Value Part Number H25T120 Device Type IGBT Maximum Collector-Emitter Voltage (VCE) 1200 V Maximum Collector Current (IC) 25 A Package TO-247AC Mounting Type Through-Hole Gate Drive Type Insulated Gate Polarity N-Channel IGBT Configuration Single Pinout: Pin Terminal 1 Gate (G) 2 Collector (C) 3 Emitter (E) Applications: Power inverters Motor drives Industrial power supplies Welding equipment Induction heating systems DC-AC converters High-voltage switching circuits Renewable-energy power converters Packages Included: 1 × H25T120 IGBT MOSFET 1200V 25A TO-247AC. Documents: H25T120 Datasheet.

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