
FDP120N10 N-Channel Power MOSFET 100V 74A TO-220
EGP 65
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FDP120N10 N-Channel Power MOSFET 100V 74A TO-220 The FDP120N10 is a high-performance N-Channel MOSFET produced using advanced POWERTRENCH process. This process has been tailored to minimize on-state resistance while maintaining superior switching performance. With a 100 V drain-to-source breakdown voltage and 74 A continuous drain current at TC = 25°C, the FDP120N10 is suitable for high-current power applications. Its typical on-resistance is 9.7 mΩ at VGS = 10 V and ID = 74 A, with a maximum specified RDS(on) of 12 mΩ under the same conditions. The device is supplied in a TO-220 package, case style 340AT, and is Pb-Free, Halide Free, and RoHS Compliant. It is designed for applications including synchronous rectification, battery protection, motor drives, UPS systems, and micro solar inverters. Features N-Channel POWERTRENCH MOSFET 100 V drain-source voltage, VDSS 74 A continuous drain current at TC = 25°C, silicon limited 52 A continuous drain current at TC = 100°C, silicon limited 296 A pulsed drain current Typical RDS(on): 9.7 mΩ @ VGS = 10 V, ID = 74 A Maximum RDS(on): 12 mΩ @ VGS = 10 V, ID = 74 A Fast switching speed Low gate charge High-performance trench technology for extremely low RDS(on) High power and current handling capability Gate threshold voltage: 2.5 V to 4.5 V Total gate charge: 66 nC typical, 86 nC maximum at VGS = 10 V Specifications Absolute Maximum Ratings (T C = 25°C unless otherwise noted) Parameter Symbol Rating Unit Drain to Source Voltage V DSS 100 V Gate to Source Voltage V GSS ±20 V Continuous Drain Current (T C = 25°C, Silicon Limited) I D 74 A Continuous Drain Current (T C = 100°C, Silicon Limited) I D 52 A Pulsed Drain Current I DM 296 A Single Pulsed Avalanche Energy (L = 0.11 mH, I AS = 60 A) E AS 198 mJ Peak Diode Recovery dv/dt dv/dt 6.0 V/ns Power Dissipation (T C = 25°C) P D 170 W Power Dissipation Derating Linearly Above 25°C – 1.14 W/°C Operating and Storage Temperature Range T J , T STG -55 to +175 °C Maximum Lead Temperature for Soldering (1/8″ from Case for 5s) T L 300 °C Thermal Characteristics Parameter Symbol Max Unit Thermal Resistance, Junction to Case R θJC 0.88 °C/W Thermal Resistance, Junction to Ambient R θJA 62.5 °C/W Electrical Characteristics (T C = 25°C) Parameter Symbol Test Conditions Min Typ Max Unit Drain to Source Breakdown Voltage BV DSS I D = 250 µA, V GS = 0V 100 – – V Breakdown Voltage Temp. Coefficient ΔBV DSS / ΔT J I D = 250 µA, Ref. to 25°C – 0.1 – V/°C Zero Gate Voltage Drain Current I DSS V DS = 100V, V GS = 0V – – 1 µA Gate to Body Leakage Current I GSS V GS = ±20V, V DS = 0V – – ±100 nA Gate Threshold Voltage V GS(th) V GS = V DS , I D = 250 µA 2.5 – 4.5 V Static Drain to Source On-Resistance R DS(on) V GS = 10V, I D = 74A – 9.7 12.0 mΩ Forward Transconductance g FS V DS = 10V, I D = 74A – 105 – S Dynamic & Switching Characteristics Parameter Symbol Test Conditions Min Typ Max Unit Input Capacitance C iss V DS = 25V, V GS = 0V, f = 1 MHz – 4215 5605 pF Output Capacitance C oss – 405 540 pF Reverse Transfer Capacitance C rss – 170 255 pF Total Gate Charge at 10V Q g(tot) V DS = 80V, I D = 74A, V GS = 10V – 66 86 nC Gate to Source Gate Charge Q gs – 26 – nC Gate to Drain “Miller” Charge Q gd – 20 – nC Turn-On Delay Time t d(on) V DD = 50V, I D = 74A, V GS = 10V, R G = 4.7 Ω – 27 64 ns Turn-On Rise Time t r – 105 220 ns Turn-Off Delay Time t d(off) – 39 88 ns Turn-Off Fall Time t f – 15 40 ns Drain-Source Diode Characteristics Parameter Symbol Test Conditions Min Typ Max Unit Max Continuous Diode Forward Current I S – – – 74 A Max Pulsed Diode Forward Current I SM – – – 296 A Drain to Source Diode Forward Voltage V SD V GS = 0V, I SD = 74A – – 1.3 V Reverse Recovery Time t rr V GS = 0V, I SD = 74A, dI F /dt = 100 A/µs – 44 – ns Reverse Recovery Charge Q rr – 67 – nC Applications Synchronous rectification for ATX / server / telecom PSU Battery protection circuits Motor drives Uninterruptible power supplies, UPS Micro solar inverters Package Content 1 x FDP120N10 N-Channel Power MOSFET 100V 74A TO-220 DataSheet FDP120N10
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