IRFBE30 N-Channel Power MOSFET Transistor 800V 4.1A TO-220

Description

IRFBE30 N-Channel Power MOSFET Transistor 800V 4.1A TO-220 The IRFBE30 from Vishay Siliconix is a third-generation N-channel power MOSFET in a TO-220AB package engineered for rugged high-voltage switching and fast, efficient operation in power conversion and industrial systems. It combines an 800 V drain-to-source rating with low thermal resistance in the TO-220AB package, repetitive-avalanche capability, and fast switching characteristics that simplify gate drive requirements and ease paralleling for higher current applications. This part is well suited for offline switch-mode power supplies, lighting and ballast circuits, motor controllers, and other high-voltage power stages where reliability and predictable switching behavior matter. Features 800 V drain-to-source breakdown voltage for high-voltage switching applications. Low on-resistance specified at VGS = 10 V for efficient conduction. Repetitive avalanche rated for rugged operation under inductive loads. Fast switching with controlled gate charge for predictable gate-drive design. Ease of paralleling and simple drive requirements for scalable power stages. Standard TO-220AB package with low thermal resistance and heatsink mounting tab. Specifications ABSOLUTE MAXIMUM RATINGS (T C = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-source voltage V DS 800 V Gate-source voltage V GS ±20 V Continuous drain current V GS at 10 V I D 4.1 (T C = 25 °C) A 2.6 (T C = 100 °C) Pulsed drain current a I DM 16 A Linear derating factor — 1.0 W/°C Single pulse avalanche energy b E AS 260 mJ Repetitive avalanche current a I AR 4.1 A Repetitive avalanche energy a E AR 13 mJ Maximum power dissipation T C = 25 °C P D 125 W Peak diode recovery dV/dt c dV/dt 2.0 V/ns Operating junction and storage temperature range T J , T stg -55 to +150 °C Soldering recommendations (peak temperature) d For 10 s — 300 °C Mounting torque 6-32 or M3 screw — 10 lbf·in — 1.1 N·m Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. V DD = 50 V, starting TJ = 25 °C, L = 29 mH, R g = 25 Ω, IAS = 4.1 A (see fig. 12) c. I SD ≤ 4.1 A, dI/dt ≤ 100 A/μs, VDD ≤ 600, TJ ≤ 150 °C d. 1.6 mm from case Applications High-voltage switched-mode power supplies (offline SMPS) for AC/DC conversion. Motor drive and inverter stages for industrial equipment. Lighting ballasts and high-voltage lamp drivers. Telecom and UPS power conversion modules. Any high-voltage switching or clamp circuits requiring repetitive avalanche capability and TO-220 mounting. Documents Datasheet IRFBE30 CAD Files KiCAD

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