MMBT3904 1AM 40V 200mW 100@10mA,1V 200mA NPN SOT-23 SMD Transistors
EGP 2
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Manufacturer Jiangsu Changjing Electronics Technology Co., Ltd. Mfr. Part # MMBT3904 Package SOT-23 Datasheet Jiangsu Changjing Electronics Technology Co., Ltd. MMBT3904 Description 40V 200mW 100@10mA,1V 200mA NPN SOT-23 Bipolar Transistors – BJT ROHS Specifications Attribute Value Category Triode/MOS Tube/Transistor/Bipolar Transistors – BJT Datasheet Jiangsu Changjing Electronics Technology Co., Ltd. MMBT3904 RoHS Collector Cut-Off Current (Icbo) 50nA Collector-Emitter Breakdown Voltage (Vceo) 40V Power Dissipation (Pd) 200mW DC Current Gain (hFE@Ic,Vce) 100@10mA,1V Collector Current (Ic) 200mA Transition Frequency (fT) 300MHz Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 300mV@50mA,5mA Transistor Type NPN Operating Temperature +150℃@(Tj)
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