FS7KM N-Channel MOSFET Transistor TO-220F
EGP 20
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FS7KM N-Channel MOSFET Transisto r TO-220F The FS7KM N-Channel MOSFET Transistor is a high-performance semiconductor designed for high-speed switching applications. It is housed in the TO-220F package, offering efficient thermal dissipation and compact dimensions suitable for a variety of electronic applications. This MOSFET features a high drain-source voltage of 900V, a drain current rating of 7A, and low on-state resistance, ensuring reliable performance in power switching circuits. The FS7KM is ideal for use in applications such as power supplies, DC-DC converters, battery chargers, and consumer electronics including printers and computers. Features: High drain-source voltage rating of 900V. Low on-state resistance of 2.0Ω. Maximum drain current of 7A. High-speed switching capability for power electronics. Suitable for various applications, including SMPS and DC-DC converters. Specifications: Parameter Value Drain-source voltage (VDS) 900V Gate-source voltage (VGS) ±30V Continuous drain current (ID) 7A Pulsed drain current (IDM) 21A Maximum power dissipation (PD) 40W Storage temperature (Tstg) -55 to +150°C Operating channel temperature (Tch) -55 to +150°C Isolation voltage (Viso) 2000Vrms Drain-source on-resistance (rDS(on)) 2.0Ω Pin Configuration: Applications: Switched-Mode Power Supplies (SMPS). DC-DC converters. Battery chargers. Power supplies for printers and copiers. Hard disk drives (HDD) and floppy disk drives (FDD). Television and video cassette recorder power circuits. Package Include: 1x FS7KM N-Channel MOSFET Transistor TO-220F Datasheet: FS7KM
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