G40T120FUH IGPT Transistor 1200V 40A TO-247
EGP 85
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G40T120FUH IGPT Transistor 1200V 40A TO-247 The G40T120FUH IGBT Transistor in TO-247 package is a high-performance power semiconductor device developed using advanced Trench Field Stop (T-FS) technology. This technology significantly reduces conduction losses, enhances switching performance, and improves avalanche ruggedness, making the device highly suitable for demanding power electronics applications. Features: Advanced Trench Field Stop (T-FS) technology. High voltage capability up to 1200V. Low collector-emitter saturation voltage. Fast switching performance for high-frequency operation. Integrated fast recovery anti-parallel diode. Specifications: Parameter Value Transistor Type IGBT Collector-Emitter Voltage (Vces) 1200V Collector Current (Ic @100°C) 40A Collector Current (Ic @25°C) 80A Pulsed Collector Current (Icm) 160A Gate-Emitter Voltage (Vge) ±20V Collector-Emitter Saturation Voltage (Vce(sat)) 1.9Vtyp (2.4Vmax) Gate Threshold Voltage (Vge(th)) 5.0–6.5V Power Dissipation (Pd) 367W Input Capacitance (Ciss) 3560pF Output Capacitance (Coss) 150pF Reverse Transfer Capacitance (Crss) 90pF Total Gate Charge (Qg) 245nC Operating Temperature Range (Tj) -55°C to +150°C Package Type TO-247 Dimensions: Pin Configuration: Applications: Uninterruptible Power Supplies (UPS). Welding converters. High-frequency switching converters. Industrial power inverters. Power factor correction systems. Motor drive applications. Renewable energy conversion systems. Package Include: 1x G40-T120FUH IGPT Transistor 1200V 40A TO-247 Datasheet: G40T120FUH
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