K956
k956 800V, 9A,150W Power MOSFET Transistor TO-3PN
EGP 22
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Specifications: Type Designator: 2SK956 Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum Power Dissipation (Pd): 150 W Maximum Drain-Source Voltage |Vds|: 800 V Maximum Gate-Source Voltage |Vgs|: 30 V Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V Maximum Drain Current |Id|: 9 A Maximum Junction Temperature (Tj): 150 °C Turn-on time(ton): 280 nS Maximum Drain-Source On-State Resistance (Rds): 1.5 Ohm Package: TO-3P 2SK956 Datasheet
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