2SA1444 PNP Power Transistor TO-220F

Description

2SA1444 PNP Power Transistor TO-220F The 2SA1444 PNP Power Transistor TO-220F is a robust silicon bipolar junction transistor (BJT) designed for high-current power switching and amplification applications. Manufactured by Inchange Semiconductor, this device features a PNP polarity and is housed in a TO-220F plastic power package, providing excellent thermal performance and easy mounting to heatsinks for enhanced power dissipation. The 2SA1444 offers a high DC current gain with low saturation voltage, making it well-suited for use as a driver transistor in power supplies, DC/DC converters, and actuator control circuits. Features: PNP epitaxial silicon construction for high reliability. Low collector-emitter saturation voltage VCE(sat). High DC current gain hFE at high collector current. High-speed switching capability. Fully isolated TO-220F package Specifications: Parameter Value Collector-Base Voltage VCBO -100VDC Collector-Emitter Voltage VCEO -60VDC Emitter-Base Voltage VEBO -7VDC Collector Current IC -15ADC Power Dissipation PC (Tc=25°C) 30W DC Current Gain hFE 60 (min) @ IC=-3A, VCE=-2V Collector-Emitter Saturation Voltage VCE(sat) -0.5V (max) @ IC=-8A, IB=-0.8A Current­Gain—Bandwidth Product 80MHz Operating Temperature -55°C to +150°C Package TO-220F Pin Configuration: Applications: High-speed switching regulators and converters. Audio power amplifier output stages. Motor drivers and solenoid control circuits. DC-DC converters and inverters. General-purpose power switching in industrial equipment. Package Include: 1x 2S-A1444 PNP Power Transistor TO-220F. Datasheet: 2SA1444

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