IRF9640 P-Channel Power MOSFET Transistor 200V 11A TO-220

Description

IRF9640 P-Channel Power MOSFET Transistor 200V 11A TO-220 The IRF9640 is a P-channel power MOSFET engineered for commercial and industrial power applications. Housed in the TO-220AB package, it offers a 200 V drain-to-source rating and is optimized for fast switching and rugged operation. Its third-generation silicon process provides a balance of low on-resistance, switching performance and avalanche robustness suitable for medium-power designs. Electrically the device supports up to −11 A continuous drain current (TC = 25 °C) with pulsed capability far higher for short durations, and has an RDS(on) of 0.50 Ω measured at VGS = −10 V (ID = −6.6 A). The IRF9640 includes a well-characterized body diode and is rated for repetitive avalanche and high dV/dt performance, making it tolerant to inductive switching stresses when used within SOA limits. Mechanically the TO-220AB offers low thermal resistance for heatsinking (RθJC ≈ 1.0 °C/W) and the datasheet provides thermal, SOA and switching graphs to guide reliable implementation. Available as Pb-free and SnPb part numbers, the IRF9640 is commonly used where a high-voltage P-channel device is required for high-side switching, complementary stages, or general power management in industrial equipment. Features: P-channel power MOSFET, VDS = −200 V. Continuous drain current −11 A (TC = 25 °C). RDS(on) = 0.50 Ω @ VGS = −10 V, ID = −6.6 A. Fast switching with low total gate charge Qg (Max 44 nC). Repetitive avalanche rated and dynamic dV/dt tolerant. Robust body-diode characteristics (IS = 11 A continuous, ISM pulsed 44 A). RoHS compliant; available in Pb-free and SnPb part numbers. Specifications: Parameter Value Device Type: P-Channel Power MOSFET Drain-Source Voltage (VDS): 200 V Gate-Source Voltage (VGS): ±20 V Continuous Drain Current (ID): 11 A Pulsed Drain Current (IDM): 44 A Drain-Source On-Resistance (RDS(on)): 0.50 Ω @ VGS = −10 V Total Power Dissipation (PD): 125 W Total Gate Charge (Qg): 44 nC Input Capacitance (Ciss): 1200 pF Output Capacitance (Coss): 370 pF Reverse Transfer Capacitance (Crss): 81 pF Junction-to-Case Thermal Resistance (RθJC): 1.0 °C/W Junction-to-Ambient Thermal Resistance (RθJA): 62 °C/W Operating Junction Temperature (TJ): −55 °C to +150 °C Package: TO-220AB Pinout: Applications: High-side switching and load switching. Complementary P-channel stages in power management. Industrial power supplies and commercial-industrial converters. General medium-power switching where P-channel is required. Package Contents: 1x IRF9640 P-Channel Power MOSFET Transistor 200V 11A TO-220 Datasheet

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