TLP250 Mosfet Driver Dip-8

Description

TLP250 Mosfet Driver Dip-8 The TLP250 arrives as a compact, 8-lead DIP optocoupler built around a GaAlAs LED and an integrated photodetector. Its design communicates purposefulness: a small, self-contained module that isolates control and power domains while packaging the drive circuitry in a familiar DIP footprint. The body feels utilitarian and immediately signals that it belongs on a designer’s workbench or inside a power electronics module. Physically modest yet mechanically robust, the device presents the tidy geometry of through-hole components and a clear pin assignment that makes it straightforward to wire into gate-drive circuits. A recommended bypass capacitor between VCC and GND is emphasized in the layout guidance, underlining that the part is intended to be used as an active, stabilized driver rather than a passive coupler. When seen in context – mounted on a PCB driving an IGBT or power MOSFET – the TLP250 reads as an engineered interface: an electromechanical handshake that translates low-power LED signals into substantial push/pull output currents while preserving galvanic isolation. Its presence simplifies the board-level layout for gate-drive stages and gives designers a clearly defined building block for switching power systems. Features: 8-lead DIP package (through-hole). GaAlAs LED + integrated photodetector design. High peak output capability (±1.5 A listed as absolute peak). Wide recommended supply voltage window (VCC typically 10–35 V). Fast switching (propagation delays typically ~0.15 µs; spec max around 0.5–1.5 µs depending on condition). High isolation rating (isolation voltage ≥ 2500 Vrms; VDE/UL options noted). Specifications: Specification (symbol) Typical / Range / Notes Package: 8-lead DIP, weight ≈ 0.54 g. Input forward voltage VF (IF=10 mA): Typ 1.6 V — 1.8 V Input reverse voltage VR: 5 V (max) Input capacitance CT (f=1 MHz): Typ 45 pF (max 250 pF) Input forward current (IF max, abs): 20 mA Supply voltage VCC (recommended): Typ 20 V; min 10 V — max 35 V Output voltage VO (Ta ≤70°C): Max 35 V (derates above 70°C) Peak output current (absolute): IOPH/IOPL ±1.5 A (short pulses) Rated peak output (recommended conditions): ±0.5 A (typ in recommended ops) Supply current ICC (VCC=30V, IF=10mA): Max ≈ 11 mA Threshold input current (L→H): Typ 1.2 mA (max 5 mA) Propagation delay tpLH / tpHL: Typ 0.15 µs, max ~0.5 µs (conditions apply) Common-mode transient immunity (CMH/CML): ±5000 V/µs (typ test condition at 600 V CM) Isolation voltage (BV, AC, 1 min): Min 2500 Vrms Operating temp: −20 °C to +85 °C Storage temp: −55 °C to +125 °C Isolation resistance RS (500 V): Typ 10¹² – 10¹⁴ Ω Pin Configuration Description PINS Details 1. NC .No Connection – Not used 2. Anode Anode terminal of LED diode 3. Cathode The cathode terminal of the LED 4. NC .No Connection – Not used 5. GND Connect with the Ground of the power supply 6. Vo Output terminal 7. Vo Output terminal 8. Vcc Connect with the Positive terminal of the power supply Pinout Diagram: Footprint: Applications: Transistor Inverter. Inverter for Air Conditioner. IGBT Gate Drive. Power MOSFET Gate Drive. Package Contents: 1x TLP250 Mosfet Driver Dip-8 Documents: TLP250 Datasheet

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