MK6264LN-120 8K X 8 64k STANDARD SRAM 100ns IC DIP-28

Description

MK6264LN-120 8K X 8 64k STANDARD SRAM 100ns IC DIP-28 The MK6264LN-120 is a 64K-bit Static Random Access Memory (SRAM) organized as 8K words by 8 bits. Manufactured by STMicroelectronics using advanced CMOS technology, this IC delivers a fast access time of 120ns, low power consumption, and full compatibility with TTL logic levels. Operating on a single +5V power supply (±10%), it is housed in a standard 28-pin Dual In-line Package (DIP), making it an excellent choice for legacy systems and applications requiring reliable, high-speed memory. Features 120ns Access Time : Ensures rapid data retrieval for time-sensitive applications. Fully Static Operation : No external clocks or timing strobes required, simplifying design. Equal Access and Cycle Times : Streamlines system timing requirements. Low Power Data Retention : Maintains data down to 2V, ideal for power-saving modes. TTL and CMOS Compatible : Versatile interfacing with a wide range of logic families. Three-State Output : Facilitates bus-oriented designs with high-impedance output control. Standard 28-pin DIP Package : Easy integration into through-hole PCB designs. Specifications Parameter Value Memory Size 64K bits (8K x 8 organization) Access Time 120ns Supply Voltage 5V ± 10% (4.5V to 5.5V) Operating Temperature 0°C to 70°C Package Type 28-pin DIP (600 mil) Input/Output Levels TTL compatible Data Retention Voltage 2V minimum Standby Mode Current 500µA max Applications Microprocessor-Based Systems : Enhances performance in legacy computing platforms. Embedded Control Systems : Reliable memory for real-time control applications. Data Acquisition and Processing : Fast storage for sensor and instrumentation data. Communication Devices : Buffering and temporary storage in telecom equipment. Industrial Automation : Durable memory solution for factory automation systems. Package Content 1 x MK6264LN-120 64k SRAM 100ns DataSheet MK6264 Series

From the supplier's page.