RHRP15120 Diode 1200V 15A Through Hole TO-220-2

Description

RHRP15120 Diode 1200V 15A Through Hole TO-220-2 The RHRP15120 is a hyper fast power diode built for demanding switching environments. Housed in a TO-220AC flange, it uses silicon-nitride passivation and ion-implanted epitaxial planar construction to deliver consistent, rugged performance. Its soft-recovery behavior keeps turn-off ringing and electrical noise low, helping protect and reduce stress on switching transistors. Designed to minimize stored charge, the device recovers faster than many ultrafast diodes, improving efficiency in high-frequency converters. Robust thermal characteristics and avalanche-rated construction give resilience against transient energy events, while low junction capacitance reduces switching distortion. These attributes help produce stable, predictable behavior across duty cycles. Balancing high voltage endurance with substantial forward-current capability, the RHRP15120 is suited for freewheeling, clamping and rectification duties in compact power assemblies. The TO-220 mounting and favorable thermal resistance simplify heatsinking and thermal management, making board layout and integration straightforward for power designers. Features: Hyper fast with soft recovery (<65 ns). Low stored charge for reduced switching losses. Silicon-nitride passivated, ion-implanted epitaxial planar construction. Avalanche energy rated. JEDEC TO-220AC package for easy heatsinking. Wide operating and storage temperature range up to 175°C. Specifications: Parameter Symbol Conditions Value Voltage Ratings Peak Repetitive Reverse Voltage V_RRM 1200 V Working Peak Reverse Voltage V_RWM 1200 V DC Blocking Voltage V_R 1200 V Current Ratings Average Rectified Forward Current I_F(AV) T_C = 140°C 15 A Repetitive Peak Surge Current I_FRM Square wave, 20 kHz 30 A Non-repetitive Peak Surge Current I_FSM Halfwave, 1 phase, 60 Hz 200 A Static Characteristics Forward Voltage V_F I_F = 15 A ~3.2 V (Typ.) Reverse Current I_R V_R = 1200 V ~100 µA (Typ.) Dynamic & Switching Characteristics Reverse Recovery Time t_rr I_F = 1 A, dI/dt = 100 A/µs ~65 ns Reverse Recovery Charge Q_RR I_F = 15 A ~150 nC Junction Capacitance C_J V_R = 10 V ~55 pF Thermal & Energy Ratings Maximum Power Dissipation P_D 100 W Avalanche Energy E_AVL 20 mJ Thermal Resistance, Junction to Case RθJC ~1.5 °C/W Temperature Ratings Operating & Storage Junction Temperature T_J, T_STG -65 to 175 °C Pinout Diagram: Footprint Diagram: Applications: Switching Power Supplies. Power Switching Circuits. General Purpose. Package Contents: 1x RHRP15120 Diode 1200V 15A Through Hole TO-220-2 Datasheet

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