K2141 N-Channel MOSFET Transistor 600V
EGP 20
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K2141 N-Channel MOSFET Transistor 600V The K2141 N-Channel MOSFET Transistor 600V TO-220 is a high-voltage power MOSFET engineered for efficient switching and control in demanding electronic systems. This device, originally manufactured by NEC (now Renesas Electronics), is commonly used in high-voltage switching applications such as industrial power supplies, motor drivers and DC-DC converter circuits. Its robust design delivers reliable performance and good avalanche energy tolerance for rugged operation Features: High drain-to-source voltage rating of 600 V for industrial power switching. N-Channel power MOSFET topology optimized for switching applications. Low maximum on-state resistance RDS(on) of 1.1 Ω @ VGS = 10 V, ID = 3.0 A. Typical input capacitance (Ciss) approximately 1150 pF for efficient gate driving. Specifications: Parameter Value Drain-Source Breakdown Voltage 600V Gate-Source Voltage ±30V Continuous Drain Current 6A Power Dissipation 35W On-State Resistance (Max) 1.1Ω Input Capacitance (Typical) 1150pF Gate Threshold Voltage (Typical values around 2-4V, max not exceeding standard range) Operating Junction Temperature -55-150°C Pin Configuration: Applications: High-voltage switching power supplies (SMPS). DC-DC converters and inverters. Motor control circuits with inductive loads. Electronic ballasts and lighting systems. Industrial power equipment and relays. Auxiliary power stages in consumer and professional electronics. Package Include: 1x K2141 N-Channel MOSFET Transistor 600V Datasheet: K2141
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