60R190QS N-channel MOSFET Transistor

Description

60R190QS N-channel MOSFET Transistor The 60R190QS is a high-voltage N-channel power MOSFET developed using Magnachip’s state-of-the-art super junction technology. This advanced design results in a transistor with exceptionally low on-resistance and gate charge, leading to significantly improved efficiency. By optimizing charge coupling, this MOSFET minimizes switching losses and electromagnetic interference (EMI), making it a user-friendly choice for designers of high-performance electronics. It is an ideal component for a wide range of switching applications, including power supplies and adapters. Features Low Power Loss : Achieved through high-speed switching and very low on-resistance. High Efficiency : Advanced super junction technology minimizes energy waste. User-Friendly Design : Optimized for low EMI and minimal switching loss. Robust and Reliable : 100% avalanche tested to ensure durability under stress. Environmentally Friendly : Comes in a green package with lead-free plating and is halogen-free. Specifications Parameter Symbol Value Unit Test Conditions Absolute Maximum Ratings (at T c =25°C unless otherwise specified) Drain-Source Voltage V DSS 600 V Gate-Source Voltage V GSS ±30 V Continuous Drain Current I D 20 A T c = 25°C 13 A T c = 100°C Pulsed Drain Current I DM 60 A Pulse width limited by T j,max Power Dissipation P D 33 W Single-Pulse Avalanche Energy E AS 420 mJ Maximum Operating Junction Temperature T j 150 °C Storage Temperature Range T stg -55 to 150 °C Static Electrical Characteristics (at T c =25°C) Drain-Source On-Resistance (Max) R DS(on),max 0.19 Ω V GS = 10V, I D = 9.5A Gate Threshold Voltage V GS(th) 2 (Min), 3 (Typ), 4 (Max) V V DS = V GS , I D = 0.25mA Zero Gate Voltage Drain Current I DSS 1 (Max) µA V DS = 600V, V GS = 0V Gate Leakage Current I GSS 100 (Max) nA V GS = ±30V, V DS = 0V Dynamic Characteristics (at T c =25°C) Total Gate Charge (Typical) Q g,typ 36 nC V GS = 10V, V DS = 480V, I D = 20A Input Capacitance (Typical) C iss 1336 pF V DS = 25V, V GS = 0V, f = 1.0MHz Output Capacitance (Typical) C oss 1352 pF Reverse Transfer Capacitance (Typical) C rss 52 pF Thermal Characteristics Thermal Resistance, Junction-to-Case (Max) R thjc 3.75 °C/W Thermal Resistance, Junction-to-Ambient (Max) R thja 75 °C/W Applications Power Factor Correction (PFC) Power Supply Stages General Switching Applications Adapters and Chargers DC-DC Converters DataSheet 60R190QS

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