BD244C
BD244C TO-220 Bipolar Transistors – BJT
EGP 7
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Specifications: Material of Transistor: Si Polarity: PNP Maximum Collector Power Dissipation (Pc): 65 W Maximum Collector-Base Voltage ‘Vcb’: 100 V Maximum Collector-Emitter Voltage ‘Vce’: 100V Maximum Emitter-Base Voltage ‘Veb’: 5 V Maximum Collector Current ‘Ic max’: 6 A Max. Operating Junction Temperature (Tj): 150 °C Forward Current Transfer Ratio (hFE), MIN: 30 Package: TO-220 BD244C Datasheet
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