IRFP360 MOSFET Transistor 400V 23A 200mΩ@14A,10V 280W null TO-247AC
EGP 60
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IRFP360 MOSFET Transistor This third-generation Power MOSFET provides designers with an excellent combination of fast switching, low on-resistance, cost-effectiveness, and a ruggedized device design. ✨ Features Dynamic dV/dt rated Repetitive avalanche rated Isolated central mounting hole Fast switching Ease of paralleling Simple drive requirements 📋 Specifications Parameter Value Package TO-247AC Drain-Source Voltage (V DS ) 400 V Static Drain-Source On-Resistance (R DS(on) ) 0.20 Ω (at V GS = 10 V) Gate-Source Threshold Voltage (V GS(th) ) 2.0 V (min) to 4.0 V (max) Continuous Drain Current (I D ) at T C = 25°C 23 A Continuous Drain Current (I D ) at T C = 100°C 14 A Pulsed Drain Current (I DM ) 92 A Maximum Power Dissipation (P D ) at T C = 25°C 280 W Gate-Source Voltage (V GS ) ±20 V Total Gate Charge (Q g ) (max.) 210 nC Operating Junction & Storage Temperature Range -55°C to +150°C 💡 Applications This device is preferred for commercial-industrial applications where higher power levels are required . DataSheet IRFP360
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