MMBT5551 G1 160V 300mW 200@10mA,5V 600mA NPN SOT-23 Bipolar Transistors – BJT SMD
EGP 1.25
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Manufacturer Jiangsu Changjing Electronics Technology Co., Ltd. Mfr. Part # MMBT5551 Package SOT-23 Datasheet Jiangsu Changjing Electronics Technology Co., Ltd. MMBT5551 Description 160V 300mW 200@10mA,5V 600mA NPN SOT-23 Bipolar Transistors – BJT ROHS Specifications Attribute Value Category Triode/MOS Tube/Transistor/Bipolar Transistors – BJT Datasheet Jiangsu Changjing Electronics Technology Co., Ltd. MMBT5551 RoHS Collector Cut-Off Current (Icbo) 50nA Collector-Emitter Breakdown Voltage (Vceo) 160V Power Dissipation (Pd) 300mW DC Current Gain (hFE@Ic,Vce) 200@10mA,5V Collector Current (Ic) 600mA Transition Frequency (fT) 100MHz Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 200mV@50mA,5mA Transistor Type NPN Operating Temperature +150℃@(Tj)
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