IRF350 N-Channel MOSFET Transistor 400V 14A TO-3
EGP 35
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IRF350 N-Channel MOSFET Transistor 400V 14A TO-3 The IRF350 is a high-voltage N-Channel HEXFET® power MOSFET from International Rectifier, designed in a robust TO-3 metal package. Utilizing advanced HEXFET technology, it delivers efficient power switching with very low on-state resistance and high transconductance. It is hermetically sealed for reliability and features excellent avalanche energy and dv/dt ruggedness. This transistor is voltage-controlled, offers fast switching speeds, stable temperature performance, and is easy to parallel, making it a durable choice for demanding high-power electronic circuits. Features: Repetitive Avalanche Ratings. Dynamic dv/dt Rating. Hermetically Sealed. Simple Drive Requirements. Ease of Paralleling. Fast Switching. Temperature Stable. Specifications: Parameter Value Unit Condition Drain-Source Voltage (VDSS): 400 V Continuous Drain Current (ID): 14 9 A TC=25°C TC=100°C On-State Resistance (RDS(on)): 0.300 Ω VGS=10V, ID=9A Gate Threshold Voltage (VGS(th)): 2.0 – 4.0 V Total Gate Charge (Qg): 52 – 110 nC Max Power Dissipation (PD): 150 W TC=25°C Junction-to-Case Thermal RθJC: 0.83 °C/W Pinout: Pin Number Pin Name Description 1 Source (S) Source Terminal 2 Gate (G) Gate Terminal 3 Drain (D) Drain Terminal (Connected to Case) Applications: Switching Power Supplies (SMPS). Motor Controllers and Drives. DC-AC Inverters. Choppers and Converters. Audio Amplifiers. High-Energy Pulse Circuits. Packages: 1x IRF350 N-Channel MOSFET Transistor 400V 14A TO-3. Documents: Datasheet
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