P55N10 MOSFET Transistor
EGP 25
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P55N10 MOSFET Transistor The P55N10 MOSFET Transistor is a premium N-Channel enhancement mode power field-effect transistor, meticulously engineered using advanced planar stripe and DMOS technology. This sophisticated manufacturing process has been specifically tailored to minimize on-state resistance while delivering superior switching performance. Rated for a substantial continuous drain current of 55A and a drain-to-source breakdown voltage of 100V, this device is built to withstand high-energy pulses in avalanche and commutation modes, ensuring rugged reliability in demanding electronic circuits. Features: 55A continuous drain current and 100V drain-source voltage. Low on-resistance of 0.026Ω for minimal power loss. Low gate charge of 75nC for efficient switching. Fast switching with rise time 250ns and fall time 140ns. Specifications: Parameter Value Drain-Source Voltage 100V Gate-Source Voltage ±25V Continuous Drain Current 55A Pulsed Drain Current 220A Power Dissipation 155W On-Resistance 0.026Ω Gate Threshold Voltage 2.0Vto4.0V Input Capacitance 2730pF Output Capacitance 830pF Reverse Transfer Capacitance 170pF Total Gate Charge 98nC Diode Forward Voltage 1.5V Reverse Recovery Time 100ns Thermal Resistance Junction-to-Case 0.97°C/W Pin Configuration: Applications: Audio amplifiers for high-fidelity sound systems. High-efficiency DC/DC converters in power supplies. DC motor control in automation and robotics. Switching applications in low-voltage circuits. Bridge configurations for power management. Package Include: 1x P55N10 MOSFET Transistor. Datasheet: P55N10
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