IRF9630 P-Channel Power MOSFET Transistor 200V, 6.5A, 0.8Ω TO-220

Description

IRF9630 P-Channel Power MOSFET Transistor 200V, 6.5A, 0.8Ω TO-220 The IRF9630 P-Channel Power MOSFET Transistor 200V, 6.5A, 0.8Ω TO-220 is a high-voltage P-channel enhancement-mode power MOSFET designed for efficient switching and power management applications. It features a maximum drain-to-source voltage of 200V, a continuous drain current of 6.5A, and a maximum on-state resistance of 0.8Ω, making it suitable for medium-power switching circuits requiring high voltage capability. The industry-standard TO-220 package provides excellent thermal performance and allows easy heatsink mounting for improved power dissipation. Features: Dynamic dV/dt rating Repetitive avalanche rated P-channel Fast switching Ease of paralleling Simple drive requirements Specifications: Parameter Value Part Number IRF9630 Transistor Type P-Channel Power MOSFET Technology Enhancement Mode MOSFET Package TO-220AB Mounting Type Through-Hole Drain-to-Source Voltage (VDS) -200V Continuous Drain Current (ID) -6.5A Pulsed Drain Current (IDM) -26A Drain-to-Source On-Resistance (RDS(on)) 0.8Ω(Max) Gate-to-Source Voltage (VGS) ±20V Gate Threshold Voltage (VGS(th)) -2V to -4V Power Dissipation (PD) 74W Total Gate Charge (Qg) 29nC(Max) Operating Junction Temperature -55°C to +150°C Package Style TO-220AB Pin Configuration: Applications: High-side power switching. Switching power supplies. DC motor control. Battery-powered equipment. Load switching circuits. Industrial control systems. Power converters. Inverters. Automotive electronic applications. General-purpose power management circuits. Package Include: 1x IRF9630 P-Channel Power MOSFET Transistor 200V, 6.5A, 0.8Ω TO-220 Datasheet

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