20N60 N-Channel MOSFET Transistor 600V 20A (TO-3P / TO-247)

Description

20N60 N-Channel MOSFET Transistor 600V 20A (TO-3P / TO-247) The 20N60 N-Channel MOSFET is a high-voltage power transistor built for switching applications up to 600V with a continuous drain current of 20A . It is commonly used in circuits that require fast switching , high efficiency , and strong performance under thermal stress—such as power converters, motor drive stages, and switching power supplies. Thanks to its low RDS(on) and solid avalanche ruggedness, the 20N60 helps reduce conduction losses and improves overall power stage efficiency. Its design supports stable operation in demanding conditions, making it a dependable option for both industrial and consumer high-voltage switching circuits. Key Features High voltage rating: up to 600V (VDS) Continuous drain current: up to 20A (ID) Low on-resistance: RDS(on) up to 0.32Ω Fast switching performance High power dissipation capability for better thermal handling Rugged avalanche capability for improved reliability Absolute Maximum Ratings Parameter Value Drain-Source Voltage (VDS) 600 V Gate-Source Voltage (VGS) 30 V Drain Current (ID) 20 A Max Power Dissipation (PD) 416 W Max Junction Temperature (TJ) 150 °C Electrical Characteristics Parameter Value Gate Threshold Voltage (VGS(th)) up to 4 V Total Gate Charge (Qg) 170 nC Rise Time (tr) 130 ns Output Capacitance (Coss) 330 pF RDS(on) up to 0.32 Ω Package Options Available in common power packages such as TO-3P / TO-247 / TO-230 (depending on the manufacturer and batch). Typical Applications Switching Power Supplies (SMPS) Power Converters & High-Voltage Switching Motor Drives Inverters and Industrial Power Stages Replacement / Substitution Notes For replacement, choose a MOSFET with: VDS ≥ 600V ID ≥ 20A Similar or lower RDS(on) Comparable Qg and switching speed Same or compatible package/pinout (TO-247 / TO-3P)

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