G100N60FDK IGBT Power Transistor
EGP 160
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G100N60FDK IGBT Power Transistor The G100N60FDK is a rugged IGBT (Insulated-Gate Bipolar Transistor) designed for 600 V blocking and roughly 100 A continuous current. As an IGBT, it combines a MOS-gate input with a bipolar conduction layer to achieve both fast switching and low conduction loss. It is housed in a TO‑247‑3 (3-pin) package with an exposed back tab (collector) and is built on Trench/Field-Stop semiconductor technology for optimal performance. This advanced field-stop design yields very low saturation voltage on the order of ~1.8 V at 100 A and very low turn-off energy, minimizing power loss. Features: 600V collector-emitter voltage rating. 100A continuous collector current. High-speed switching capability. Low conduction loss for energy efficiency. Specifications: Parameter Value Collector–Emitter Voltage (V_CE) 600 V Continuous Collector Current 100 A V_CE(sat) (typ. @100 A, 25 °C) 1.85 V Gate–Emitter Threshold (V_GE(th)) ~5.1 V (typ) Operating Junction Temperature –40…+175 °C Package TO‑247‑3 Pin Configuration: Pin1-gate. Pin2&backside-collector. Pin3-emitter. Applications: un interruptible power supplies. welding converters. converters with high switching frequency. Package Include: 1x G100N60FDK IGBT Power Transistor.
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