Toshiba 2SK2699 N-Channel MOSFET Transistor 600V 12A TO-3P

Description

Toshiba 2SK2699 N-Channel MOSFET Transistor 600V 12A TO-3P The 2SK2699 is a high-performance, silicon N-channel MOS field effect transistor manufactured by Toshiba . Operating in enhancement mode, this power MOSFET features a low leakage current and an exceptionally low drain-source ON resistance . It is explicitly engineered for high-efficiency switching and power management systems, making it a reliable choice for chopper regulators, DC-DC converters, and motor drive applications . Features Enhancement Mode Operation Low ON-Resistance High Forward Transfer Admittance Low Leakage Current Specifications Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage V DSS 600 V Drain-gate voltage ( R GS = 20 kΩ ) V DGR 600 V Gate-source voltage V GSS ±30 V Drain current (DC) I D 12 A Drain current (Pulse) I DP 48 A Drain power dissipation ( T c = 25°C ) P D 150 W Single pulse avalanche energy E AS 605 mJ Avalanche current I AR 12 A Repetitive avalanche energy E AR 15 mJ Channel temperature T ch 150 °C Storage temperature range T stg -55 to 150 °C Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current I GSS V GS = ±25 V, V DS = 0 V — — ±10 μA Gate-source breakdown voltage V (BR)GSS I G = ±10 μA, V DS = 0 V +30 — — V Drain cut-off current I DSS V DS = 600 V, V GS = 0 V — — 100 μA Drain-source breakdown voltage V (BR)DSS I D = 10 mA, V GS = 0 V 600 — — V Gate threshold voltage V th V DS = 10 V, I D = 1 mA 2.0 — 4.0 V Drain-source ON resistance R DS(ON) V GS = 10 V, I D = 6 A — 0.5 0.65 Ω Forward transfer admittance |Y fs | V DS = 10 V, I D = 6 A 6.0 11.0 — S Input capacitance C iss V DS = 10 V, V GS = 0 V, f = 1 MHz — 2600 — pF Reverse transfer capacitance C rss — 270 — Output capacitance C oss — 820 — Rise time t r I D = 6 A, V GS = 10 V, V DD ≈ 300 V, R L = 50 Ω, Duty ≤ 1%, t w = 10 μs — 45 — ns Turn-on time t on — 75 — Fall time t f — 65 — Turn-off time t off — 270 — Total gate charge Q g V DD ≈ 480 V, V GS = 10 V, I D = 12 A — 58 — nC Gate-source charge Q gs — 37 — Gate-drain (“Miller”) charge Q gd — 21 — Source-Drain Diode Ratings and Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current I DR — — — 12 A Pulse drain reverse current I DRP — — — 48 A Forward voltage (diode) V DSF I DR = 12 A, V GS = 0 V — — -1.7 V Reverse recovery time t rr I DR = 12 A, V GS = 0 V, dI DR /dt = 100 A/μs — 460 — ns Reverse recovery charge Q rr — 4.8 — μC Thermal Characteristics Characteristic Symbol Max Unit Thermal resistance, channel to case R th(ch-c) 0.833 °C/W Thermal resistance, channel to ambient R th(ch-a) 50 °C/W Applications Chopper Regulators DC-DC Converters Motor Drives Package Content 1 x Toshiba 2SK2699 N-Channel MOSFET Transistor 600V 12A TO-3P DataSheet 2SK2699

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