FK25SM N-Channel MOSFET Transistor TO-3P
EGP 30
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FK25SM N-Channel MOSFET Transistor TO-3P The Mitsubishi FK25SM-5 N-Channel Power MOSFET is a robust semiconductor device engineered for high-speed switching applications in modern power electronics. As an N-channel enhancement-mode MOSFET, it utilizes silicon technology to provide superior conductivity when activated by a positive gate-source voltage, enabling efficient control of high currents and voltages.\ Features: High-speed switching for efficient power control. Low on-state resistance of 0.16Ω maximum to minimize losses. Integrated fast recovery diode with 150ns maximum reverse recovery time. Wide operating temperature range from -55°C to +150°C. High drain-source voltage rating of 250V. Continuous drain current capability of 25A. Specifications: Parameter Value Drain-Source Voltage (VDS) 250V Gate-Source Voltage (VGS) ±30V Drain Current (ID) 25A Drain Current (Pulsed) 75A On-Resistance (rDS(on)) 0.16Ω Power Dissipation (PD) 250W Channel Temperature (Tch) 150°C Storage Temperature (Tstg) -55°C to +150°C Package Type TO-3P Type N-Channel MOSFET Pin Configuration: Applications: Power conversion systems for efficient energy transfer. Servo motor drives for precise speed and torque control. Industrial robots and automation systems. Inverter circuits for renewable energy applications. Uninterruptible power supplies (UPS) for stable power delivery. Fluorescent lighting and other high-power switching applications. package Include: 1x FK25SM N-Channel MOSFET Transistor TO-3P. Datasheet: FK25SM
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