IRLZ44Z N-Channel MOSFET Transistor 55V 51A Through Hole TO-220AB

Description

IRLZ44Z N-Channel MOSFET Transistor 55V 51A Through Hole TO-220AB The IRLZ44Z is an N-Channel HEXFET® Power MOSFET that utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area . Designed for efficiency and reliability, this device features a high operating temperature of 17 5 ∘ C and fast switching speeds, making it a robust component for a wide range of electronic designs . Features Logic Level Drive: Designed to be triggered by logic-level gate voltages . Advanced Process Technology: Optimized for ultra-low on-resistance ( R D S ( o n ) ​ ) . High Temperature Rating: Operating junction temperature up to 17 5 ∘ C . Fast Switching: Engineered for high-speed performance in power circuits . Repetitive Avalanche: Built to allow repetitive avalanche energy up to T jma x ​ . Lead-Free: Environmentally friendly construction . Specifications Parameter Value Conditions / Notes Absolute Maximum Ratings Drain-to-Source Voltage (V DSS ) 55 V – Continuous Drain Current (I D ) @ 25°C 51 A V GS @ 10V (Silicon Limited) Continuous Drain Current (I D ) @ 100°C 36 A V GS @ 10V Pulsed Drain Current (I DM ) 204 A – Power Dissipation (P D ) @ 25°C 80 W – Gate-to-Source Voltage (V GS ) ± 16 V – Single Pulse Avalanche Energy (E AS ) 78 mJ Thermally limited Operating Junction and Storage Temp Range -55 to +175 °C – Static Electrical Characteristics (@ T J = 25°C) Static Drain-to-Source On-Resistance (R DS(on) ) 13.5 mΩ V GS = 10V, I D = 31A Static Drain-to-Source On-Resistance (R DS(on) ) 20 mΩ V GS = 5.0V, I D = 30A Static Drain-to-Source On-Resistance (R DS(on) ) 22.5 mΩ V GS = 4.5V, I D = 15A Gate Threshold Voltage (V GS(th) ) 1.0 V to 3.0 V V DS = V GS , I D = 250μA Forward Transconductance (g fs ) 27 S V DS = 25V, I D = 31A (Min) Dynamic & Switching Characteristics Total Gate Charge (Q g ) 24 nC (Typ) / 36 nC (Max) I D = 31A, V DS = 44V, V GS = 5.0V Turn-On Delay Time (t d(on) ) 14 ns V DD = 50V, I D = 31A, R G = 7.5Ω Rise Time (t r ) 160 ns V DD = 50V, I D = 31A, R G = 7.5Ω Turn-Off Delay Time (t d(off) ) 25 ns V DD = 50V, I D = 31A, R G = 7.5Ω Fall Time (t f ) 42 ns V DD = 50V, I D = 31A, R G = 7.5Ω Thermal Resistance Junction-to-Case (R θJC ) 1.87 °C/W Max Junction-to-Ambient (R θJA ) 62 °C/W Max Applications The combination of fast switching, rugged design, and low on-resistance makes the IRLZ44Z suitable for an extremely wide variety of efficient and reliable power applications . Package Content 1 x IRLZ44Z N-Channel MOSFET Transistor 55V 51A Through Hole TO-220AB DataSheet IRLZ44Z

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