SUP75P05-08 P-CH MOSFET Transistor 55V 75A

Description

SUP75P05-08 P-CH MOSFET Transistor 55V 75A The SUP75P05-08 P-CH MOSFET Transistor 55V 75A is a high-performance power semiconductor device engineered for robust switching and amplification in electronic circuits. This P-channel enhancement-mode transistor utilizes advanced TrenchFET technology to achieve exceptional efficiency, with a drain-source breakdown voltage of 55V and a maximum continuous drain current of 75A at 25°C case temperature. Its low on-state resistance of 0.008Ω at 10V gate-source voltage minimizes power losses, making it suitable for applications where heat dissipation and energy efficiency are critical. The device supports pulsed currents up to 240A, allowing it to handle transient loads effectively without compromising reliability. Features: P‑channel enhancement‑mode power MOSFET. 55V maximum drain‑source voltage rating. 75A continuous drain current capability (case‑mount, at 25°C). Very low drain‑source on‑resistance for reduced conduction losses. Specifications: Parameter Value Drain-Source Voltage 55V Gate-Source Voltage ±20V Continuous Drain Current (25°C) 75A Pulsed Drain Current 240A On-State Resistance (VGS=-10V) 0.008Ω Gate Threshold Voltage 1Vto-3V Input Capacitance 8500pF Output Capacitance 1220pF Reverse Transfer Capacitance 915pF Total Gate Charge 140nC Power Dissipation (25°C) 250W Junction-to-Case Thermal Resistance 0.6°C/W Pin Configuration: Applications: High‑side switching in DC power circuits where P‑channel MOSFET topology is preferred. Power management and control in battery‑powered devices or DC‑DC converters. Motor control, battery charging/discharging circuits, and other high‑current switching tasks. Power supply protection and load switching in industrial or embedded electronics. Replacement or repair in legacy circuits using 55 V, 75 A MOSFETs. Package Include: 1x SUP75P05-08 P-CH MOSFET Transistor 55V 75A Datasheet: SUP75P05-08

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