S9012
S9012 TO-92 PNP Bipolar Transistors – BJT
EGP 1
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S9012 Key Features High total power dissipation. (PT=625mW) High Collector Current. (IC= -500mA) Characteristics of S9012 Transistor Type: PNP Collector-Emitter Voltage, max: -25 V Collector-Base Voltage, max: -40 V Emitter-Base Voltage, max: -5 V Collector Current − Continuous, max: -0.5 A Collector Dissipation: 0.625 W DC Current Gain (h fe ): 64 to 300 Transition Frequency, min: 150 MHz Operating and Storage Junction Temperature Range: -55 to +150 °C Package: TO-92 S9012 Datasheet
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