STD2NK100Z 1KV 1.85A 8.5Ω@10V,900mA 70W N Channel TO-252-2(DPAK) Mosfet Transistor
EGP 125
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Technical Specifications Physical Case/Package DPAK Contact Plating Tin Mount Surface Mount Number of Pins 3 Technical Continuous Drain Current (ID) 1.85 A Drain to Source Breakdown Voltage 1 kV Drain to Source Resistance 8.5 Ω Drain to Source Voltage (Vdss) 1 kV Element Configuration Single Gate to Source Voltage (Vgs) 30 V Input Capacitance 499 pF Max Operating Temperature 150 °C Max Power Dissipation 70 W Min Operating Temperature -55 °C Number of Elements 1 Packaging Digi-Reel® Power Dissipation 70 W Rds On Max 8.5 Ω Resistance 8.5 Ω Threshold Voltage 3.75 V Turn-Off Delay Time 41.5 ns Turn-On Delay Time 7.2 ns Datasheet
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