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2SK1340 N-Channel MOSFET Transistor 900V 5A TO-3P

2SK1340 N-Channel MOSFET Transistor 900V 5A TO-3P

In stockTransistors & MOSFETsVerified 3 weeks ago

EGP 75

Makers Electronics

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Description

2SK1340 N-Channel MOSFET Transistor 900V 5A TO-3P The 2SK1340 MOSFET transistor is a high-voltage N-channel device designed for high-speed power switching applications. It features a maximum drain-source voltage of 900V and a maximum drain current of 5A, making it suitable for high-voltage and high-current operations. Its low on-resistance ensures efficient conduction, minimizing power loss during switching. The transistor operates with fast switching speeds, which makes it ideal for applications such as switching regulators, DC-DC converters, and high-voltage power supplies. Packaged typically in a TO-3P case, the 2SK1340 provides robust performance and reliable operation in demanding electrical environments, including industrial and power electronics circuits. It is known for its high efficiency and durability, making it a popular choice for high-voltage switching applications. Features Silicon N-channel MOSFET designed for high-speed power switching applications. Maximum drain-source voltage (Vds) of 900 V. Maximum continuous drain current (Id) of 5 A at 25°C. Low on-resistance for efficient power conduction. Fast switching speed for improved device performance. Low drive current requirement. No secondary breakdown, enhancing device reliability. Ideal for switching regulators and DC-DC converter applications. Packaged in a TO-3P case for improved thermal performance and durability. Suitable for industrial power electronics and high voltage circuits. Pinout Configuration Pin Number Pin Name Description 1 Gate (G) Controls the MOSFET switching 2 Drain (D) Drain terminal for current flow 3 Source (S) Source terminal for current flow Specification Parameters Defiles Transistor Type MOSFET Transistor Part Number 2SK1340 Channel N-Channel Maximum Drain-Source Voltage (Vds) 900 V Maximum Drain Current (Id) 5 A Maximum Gate-Source Voltage (Vgs) ±30 V Maximum Power Dissipation (Pd) 100 W Maximum Junction Temperature (Tj) 150 °C Maximum Drain-Source On-Resistance (Rds(on)) 3 – 4 Ω Rise Time (tr) 70 nsec Output Capacitance (Coss) 305 pF Package Type TO-3P Operating Temperature Range -55 °C to +150 °C Applications High-speed power switching in electronic circuits. Switching regulators and DC-DC converters. Audio amplifier power stages for clean and efficient output. Industrial control systems requiring high voltage and current handling. Power management in various consumer and industrial electronics. High voltage circuit applications with robust demands on reliability. Renewable energy systems involving power conversion and control. Motor control circuits for efficient switching and power handling. Package Contents 1 x 2SK1340 MOSFET Transistor N-Channel 900V 5A TO-3P Datasheet 2SK1340

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2SK1340 N-Channel MOSFET Transistor 900V 5A TO-3P · makhzan