IRFP460 N-Channel Power MOSFET Transistor TO-247 (500V-0.27Ω-20A)
EGP 75
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IRFP460 N-Channel Power MOSFET The IRFP460 is a Third Generation HEXFET® Power MOSFET from International Rectifier, designed to provide the best combination of fast switching, ruggedized device design, and cost-effectiveness. It features low on-resistance and is housed in a TO-247AC package, which is preferred for commercial-industrial applications. Features Dynamic dv/dt Rating: Optimized for robustness against voltage transients. Repetitive Avalanche Rated: Designed to handle repetitive avalanche energy. Fast Switching: Suitable for high-frequency switching applications. Isolated Central Mounting Hole: Provides superior isolation compared to TO-218. Ease of Paralleling: Simplifies circuit design for higher power requirements. Specifications Parameter Symbol Value Unit Test Conditions Drain-to-Source Voltage V DSS 500 V – Continuous Drain Current I D 20 A T C = 25°C Continuous Drain Current I D 13 A T C = 100°C Pulsed Drain Current I DM 80 A – Power Dissipation P D 280 W T C = 25°C Gate-to-Source Voltage V GS ±20 V – Single Pulse Avalanche Energy E AS 960 mJ – Static Drain-to-Source On-Resistance R DS(on) 0.27 Ω Max value Operating Junction Temperature T J -55 to +150 °C – Applications Commercial-industrial applications requiring high power levels. Applications requiring fast switching speeds . Datasheet IRFP460
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