2SK2225 N-Channel MOSFET Transistor 1500V 2A TO-3PFM

Description

2SK2225 N-Channel MOSFET Transistor 1500V 2A TO-3PFM The 2SK2225 is a high-voltage, N-channel MOSFET, engineered specifically for high-speed power switching applications . Boasting an exceptionally high breakdown voltage of 1500V, this component is ideally suited for robust power supplies, regulators, and converters where secondary breakdown resistance and minimal drive currents are paramount . It comes housed in an isolated, through-hole TO-3PFM package . Features Ultra-High Breakdown Voltage High-Speed Switching Low Drive Current Enhanced Reliability Specifications Specification Item Symbol Value / Rating Unit Test Conditions Absolute Maximum Ratings (Ta = 25°C) Drain to Source Voltage V DSS 1500 V — Gate to Source Voltage V GSS ±20 V — Drain Current I D 2 A — Drain Peak Current I D(pulse) 7 A PW ≤ 10 μs, duty cycle ≤ 1% Body to Drain Diode Reverse Drain Current I DR 2 A — Channel Dissipation P ch 50 W Value at Tc = 25°C Channel Temperature T ch 150 °C — Storage Temperature T stg -55 to +150 °C — Electrical Characteristics (Ta = 25°C) Drain to Source Breakdown Voltage V (BR)DSS 1500 (Min) V I D = 10 mA, V GS = 0 Static Drain to Source On State Resistance R DS(on) 9 (Typ) / 12 (Max) Ω I D = 1 A, V GS = 15 V (Pulse Test) Gate to Source Cutoff Voltage V GS(off) 2.0 (Min) to 4.0 (Max) V I D = 1 mA, V DS = 10 V Forward Transfer Admittance |y fs | 0.45 (Min) / 0.75 (Typ) S I D = 1 A, V DS = 20 V (Pulse Test) Zero Gate Voltage Drain Current I DSS 500 (Max) μA V DS = 1200 V, V GS = 0 Gate to Source Leak Current I GSS ±1 (Max) μA V GS = ±20 V, V DS = 0 Dynamic & Switching Characteristics (Ta = 25°C) Input Capacitance C_{iss} 990 (Typ) pF V DS = 10 V, V GS = 0, f = 1 MHz Output Capacitance C oss 125 (Typ) pF Reverse Transfer Capacitance C rss 60 (Typ) pF Turn-on Delay Time t d(on) 17 (Typ) ns I D = 1 A, V GS = 10 V, R L = 30 Ω Rise Time t r 50 (Typ) ns Turn-off Delay Time t d(off) 150 (Typ) ns Fall Time t f 50 (Typ) ns Body to Drain Diode Characteristics (Ta = 25°C) Body to Drain Diode Forward Voltage V DF 0.9 (Typ) V I F = 2 A, V GS = 0 Body to Drain Diode Reverse Recovery Time t rr 1750 (Typ) ns I F = 2 A, V GS = 0, di F /dt = 100 A/μs Applications Switching Regulators High-Speed DC-DC Converters High-Speed Power Switching Circuits Package Content 1 x 2SK2225 N-Channel MOSFET Transistor 1500V 2A TO-3PFM DataSheet 2SK2225

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