CLA80E1200HF High-Efficiency Single Thyristor SCR 1200V 80A TO-247

Description

CLA80E1200HF High-Efficiency Single Thyristor SCR 1200V 80A TO-247 The CLA80E1200HF is a high-efficiency single thyristor supplied in an industry-standard TO-247. It is designed for line-frequency operation at 50/60Hz and uses a planar passivated chip for long-term stability. The device provides 1200V repetitive reverse/forward blocking voltage and 1300V non-repetitive blocking voltage . Its current ratings include 80A average forward current with a 180° sine waveform and 126A RMS forward current . The device also supports high surge current capability, with ratings of 900A for 10ms at 50Hz and 970A for 8.3ms at 60Hz under the specified conditions. Features Single high-efficiency thyristor / SCR Designed for line-frequency applications, 50/60Hz Planar passivated chip Long-term stability Repetitive blocking voltage: 1200V Non-repetitive blocking voltage: 1300V Average forward current: 80A RMS forward current: 126A High surge current capability Backside anode Specification Parameter Value / Condition Voltage Ratings Repetitive reverse/forward blocking voltage, VRRM / VDRM 1200 V, Tj = 25°C Non-repetitive reverse/forward blocking voltage, VRSM / VDSM 1300 V, Tj = 25°C Current Ratings Average forward current, ITAV 80 A, 180° sine, TC = 115°C RMS forward current, IT(RMS) 126 A RMS current per terminal, package rating 70 A Surge Current and Fusing Surge forward current, ITSM, Tj = 45°C 900 A, t = 10 ms, 50 Hz sine; 970 A, t = 8.3 ms, 60 Hz sine; VR = 0 V Surge forward current, ITSM, Tj = 150°C 765 A, t = 10 ms, 50 Hz sine; 825 A, t = 8.3 ms, 60 Hz sine; VR = 0 V I²t value for fusing, Tj = 45°C 4.05 kA²s, t = 10 ms; 3.92 kA²s, t = 8.3 ms; VR = 0 V I²t value for fusing, Tj = 150°C 2.93 kA²s, t = 10 ms; 2.83 kA²s, t = 8.3 ms; VR = 0 V On-State Characteristics Forward voltage drop, VT, Tj = 25°C 1.40 V max at 80 A; 1.77 V max at 160 A Forward voltage drop, VT, Tj = 125°C 1.38 V max at 80 A; 1.87 V max at 160 A Threshold voltage, VT0 0.88 V, Tj = 150°C, for power loss calculation only Slope resistance, rT 6.3 mΩ, Tj = 150°C, for power loss calculation only Leakage Current Reverse current / drain current, IR / ID 50 µA max at Tj = 25°C; 5 mA max at Tj = 125°C; V = 1200 V Thermal Ratings Thermal resistance, junction to case, RthJC 0.2 K/W Thermal resistance, case to heatsink, RthCH 0.25 K/W Total power dissipation, Ptot 620 W, TC = 25°C Virtual junction temperature, TVJ -40 to +150°C Operation temperature, Top -40 to +125°C Storage temperature, Tstg -40 to +150°C Gate Ratings Maximum gate power dissipation, PGM 10 W, t = 30 µs; 5 W, t = 300 µs Average gate power dissipation, PGAV 0.5 W Gate trigger voltage, VGT 1.5 V max at Tj = 25°C; 1.6 V max at Tj = -40°C; VD = 6 V Gate trigger current, IGT 38 mA max at Tj = 25°C; 80 mA max at Tj = -40°C; VD = 6 V Gate non-trigger voltage, VGD 0.2 V max, Tj = 150°C, VD = 2/3 VDRM Gate non-trigger current, IGD 5 mA max, Tj = 150°C, VD = 2/3 VDRM Dynamic Ratings Critical rate of rise of voltage, dv/dt 1000 V/µs, Tj = 150°C, VD = 2/3 VDRM, RGK = ∞, linear voltage rise Repetitive critical rate of rise of current, di/dt 150 A/µs Non-repetitive critical rate of rise of current, di/dt 500 A/µs, IT = 80 A Junction capacitance, CJ 36 pF typ, VR = 400 V, f = 1 MHz, Tj = 25°C Switching and Triggering Latching current, IL 150 mA max, Tj = 25°C Holding current, IH 100 mA max, Tj = 25°C Gate controlled delay time, tgd 2 µs max, Tj = 25°C Turn-off time, tq 150 µs Applications Line rectifying 50/60Hz Soft-start AC motor control DC motor control Power converters AC power control Lighting control Temperature control Package Contents 1x CLA80E1200HF High-Efficiency Single Thyristor SCR 1200V 80A TO-247 Documents CLA80E1200HF

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