S9015 M6 SMD Bipolar Transistors – BJT 45V 200mW 300@1mA,5V 100mA PNP SOT-23

Description

S9015 M6 SMD Bipolar Transistors – BJT 45V 200mW 300@1mA,5V 100mA PNP SOT-23 The S9015 M6 PNP Bipolar Transistor 45V 100mA 200mW SOT-23 is a general-purpose surface-mount bipolar junction transistor designed for low-power switching and signal amplification applications. Its compact SOT-23 package makes it suitable for high-density PCB layouts while providing reliable electrical performance in consumer, industrial, communication, and embedded electronic circuits. Features: PNP bipolar junction transistor. Surface-mount SOT-23 package. Collector-emitter voltage up to 45V. Collector-base voltage up to 50V. Continuous collector current up to 100mA. Power dissipation of 200mW. Specifications Attribute Value Category Triode/MOS Tube/Transistor/Bipolar Transistors – BJT RoHS Collector Cut-Off Current (Icbo) 100nA Collector-Emitter Breakdown Voltage (Vceo) 45V Power Dissipation (Pd) 200mW DC Current Gain (hFE@Ic,Vce) 300@1mA,5V Collector Current (Ic) 100mA Transition Frequency (fT) 150MHz Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 300mV@100mA,10mA Transistor Type PNP Operating Temperature +150℃@(Tj) Pin Configuration: Footprint: Applications: General-purpose electronic switching. Signal amplification circuits. Audio pre-amplifiers. Driver circuits. Sensor interface circuits. Portable electronic devices. Consumer electronics. Industrial control equipment. Embedded system designs. Package Include: 1x S9015 M6 PNP Bipolar Transistor SOT-23. Datasheet

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