G20N60 C3 N- Channel IGBT transistor (40A, 600V) TO-247
EGP 65
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G20N60 C3 N- Channel IGBT transistor (40A, 600V) TO-247 G20N60 is a high voltage switching MOS gated device that combines the finest qualities of MOSFETs and bipolar transistors. The component combines a bipolar transistor’s low on-state conduction loss with a MOSFET’s high input impedance to provide the desired effect. Between 25 and 150 degrees Celsius, the significantly lower on-state voltage loss hardly varies slightly. The IGBT is utilized in anti-parallel with the RHRP3060 diode. Many high voltage switching applications running at moderate frequencies and requiring minimal conduction losses are excellent candidates for the IGBT. Features Highly reliable 40A, 600V at TC= 25oC Short Circuit Rated Low Conduction Loss It has high capability to reduce power losses Specification Model G20N60 Type N-Channel IGBT Peak Repetitive Reverse Voltage 600V Package TO-247 Brand name Fairchild Typical fall time 140nS Maximum Power Dissipation 165W Operating and Storage Temperature Range -65 to 175 centigrade Country of Origin China
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