40T120 IGBT N-Channel Power MOSFET 1200V, 40A, 3-Pin, TO-247
EGP 95
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40T120 IGBT N-Channel Power MOSFET 1200V, 40A, 3-Pin, TO-247 Specifications: Product Attribute Attribute Value Manufacturer: Infineon Product Category: IGBT Transistors RoHS: ? Details Technology: Si Package/Case: TO-247-3 Mounting Style: Through Hole Configuration: Single Collector- Emitter Voltage VCEO Max: 1200 V Collector-Emitter Saturation Voltage: 1.7 V Maximum Gate Emitter Voltage: 20 V Continuous Collector Current at 25 C: 75 A Pd – Power Dissipation: 270 W Minimum Operating Temperature: – 40 C Maximum Operating Temperature: + 150 C Series: TRENCHSTOP IGBT Packaging: Tube Brand: Infineon Technologies Gate-Emitter Leakage Current: 600 nA Height: 20.95 mm Length: 15.9 mm Product Type: IGBT Transistors Factory Pack Quantity: 240 Subcategory: IGBTs Tradename: TRENCHSTOP Width: 5.3 mm Part # Aliases: SP000013886 IGW4T12XK IGW40T120FKSA1 Unit Weight: 38 g Package Includes: 1x 40T120 IGBT Datasheet: 40T120 Datasheet Related Products: Transistors
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