IRF460 N-Channel MOSFET Transistor 500V 21A TO-3
EGP 35
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IRF460 N-Channel MOSFET Transistor 500V 21A TO-3 The IRF460 is a rugged N-Channel HEXFET power MOSFET designed for high-voltage and high-current switching applications. It features a hermetically sealed TO-3 metal package that provides excellent heat dissipation and mechanical durability, making it ideal for demanding industrial environments. Thanks to its fast switching performance, strong avalanche capability, and built-in body diode, the IRF460 is widely used in switching power supplies, inverters, welders, induction heating, audio amplifiers, and motor drive circuits where stable high-voltage operation is required. Features: High-voltage N-channel MOSFET structure. Rugged avalanche and dv/dt rated design. Fast switching performance. Built-in body diode. Hermetically sealed metal package. Excellent thermal conductivity. Easy gate drive requirements. Suitable for parallel operation. Specifications: Parameter Value Transistor Type: N-Channel MOSFET Drain-Source Voltage: 500V Continuous Drain Current: 21A Pulsed Drain Current: 84A Power Dissipation: 300W Gate-Source Voltage: ±20V On-Resistance (RDS(on)): 0.27Ω Operating Temperature: −55°C to +150°C Package: TO-3 Mounting: Through-hole Pinout: Pin / Case Function Case (Metal Body) Drain Pin 1 Source Pin 2 Gate Applications Switching power supplies (SMPS). Inverters and UPS systems. Motor speed controllers. Welders and induction heaters. High-power audio amplifiers. Industrial power control circuits. Packages: 1x IRF460 N-Channel MOSFET Transistor 500V 21A TO-3. Documents: Datasheet
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