IRF643 N-CHANNEL POWER MOSFET 150 V 16A TO-220

Description

IRF643 N-CHANNEL POWER MOSFET 150 V 16A TO-220 The IRF643 N-Channel Power MOSFET 150V 16A TO-220 is a robust semiconductor device engineered for demanding power management applications. As part of the Fairchild Semiconductor’s power MOSFET lineup, this component leverages silicon-gate technology to deliver efficient switching performance in enhancement mode. In this configuration, the MOSFET remains off until a positive voltage is applied to the gate relative to the source, allowing precise control over high currents and voltages. This makes it particularly suitable for circuits where energy efficiency and rapid response times are critical. Features: N-channel enhancement-mode design for efficient switching. Low static drain-source on-resistance of 0.22Ω. Gate-source voltage rated at ±20V. Fast switching speeds with silicon-gate technology. Rugged construction for reliable operation in harsh environments. Specifications: Parameter Value Drain-Source Voltage 150V Gate-Source Voltage ±20V Continuous Drain Current (TC=25°C) 16A Continuous Drain Current (TC=100°C) 10A Pulsed Drain Current 72A Power Dissipation (TC=25°C) 125W Static Drain-Source On-Resistance 0.22Ω Gate Threshold Voltage 2.0-4.0V Input Capacitance 1600pF Output Capacitance 750pF Reverse Transfer Capacitance 300pF Turn-On Delay Time 30ns Rise Time 60ns Turn-Off Delay Time 80ns Fall Time 60ns Total Gate Charge 60nC Operating Temperature Range -55°C to +150°C Applications: Switching power supplies for efficient voltage regulation. Uninterruptible power supplies (UPS) for backup power management. AC and DC motor controls for precise speed and torque adjustment. Relay and solenoid drivers for electromechanical actuation. High-energy pulse circuits in specialized electronic systems. Package Include: 1x IRF643 N-CHANNEL POWER MOSFET 150 V 16A TO-220 Datasheet: IRF643

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