Silan 40N60NPFD Field Stop IGBT Transistor 600V 40A TO-3P

Description

Silan 40N60NPFD Field Stop IGBT Transistor 600V 40A TO-3P The SGT40N60NPFDPN from Silan Microelectronics is a 40A, 600V Field Stop IGBT in a TO-3P package. Using Field Stop IGBT technology, it offers the optimum performance for induction heating, UPS, SMPS and PFC applications. The device combines low conduction loss (VCE(sat) typ. 1.8V @ IC = 40A) with fast switching and high input impedance, and features an integrated fast recovery diode (FRD) with a typical reverse recovery time of 32ns. Features 40A, 600V, VCE(sat) (typ.) = 1.8V @ IC = 40A Low conduction loss Fast switching High input impedance Specifications Absolute Maximum Ratings (T C = 25°C unless otherwise noted) Parameter Symbol Ratings Units Collector to Emitter Voltage V CE 600 V Gate to Emitter Voltage V GE ±20 V Collector Current (T C = 25°C) I C 80 A Collector Current (T C = 100°C) I C 40 A Pulsed Collector Current I CM 120 A Maximum Power Dissipation (T C = 25°C) P D 290 W Power Dissipation Derating P D 2.32 W/°C Operating Junction Temperature T J -55 to +175 °C Storage Temperature Range T stg -55 to +175 °C Thermal Characteristics Parameter Symbol Ratings Units Thermal Resistance, Junction to Case (IGBT) R θJC 0.24 °C/W Thermal Resistance, Junction to Case (FRD) R θJC 1.4 °C/W Thermal Resistance, Junction to Ambient R θJA 35.5 °C/W Electrical Characteristics – IGBT (T C = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Units Collector to Emitter Breakdown Voltage BV CE V GE = 0V, I C = 250µA 600 – – V C-E Leakage Current I CES V CE = 600V, V GE = 0V – – 200 µA G-E Leakage Current I GES V GE = 20V, V CE = 0V – – ±500 nA G-E Threshold Voltage V GE(th) I C = 250µA, V CE = V GE 4.0 5.0 6.5 V Collector to Emitter Saturation Voltage V CE(sat) I C = 40A, V GE = 15V – 1.8 2.7 V Collector to Emitter Saturation Voltage V CE(sat) I C = 40A, V GE = 15V, T C = 125°C – 2.1 – V Input Capacitance C ies V CE = 30V, V GE = 0V, f = 1MHz – 1850 – pF Output Capacitance C oes V CE = 30V, V GE = 0V, f = 1MHz – 180 – pF Reverse Transfer Capacitance C res V CE = 30V, V GE = 0V, f = 1MHz – 50 – pF Turn-On Delay Time T d(on) V CE = 400V, I C = 40A, R g = 10Ω, V GE = 15V, inductive load – 18 – ns Rise Time T r V CE = 400V, I C = 40A, R g = 10Ω, V GE = 15V, inductive load – 80 – ns Turn-Off Delay Time T d(off) V CE = 400V, I C = 40A, R g = 10Ω, V GE = 15V, inductive load – 110 – ns Fall Time T f V CE = 400V, I C = 40A, R g = 10Ω, V GE = 15V, inductive load – 105 – ns Turn-On Switching Loss E on V CE = 400V, I C = 40A, R g = 10Ω, V GE = 15V, inductive load – 1.87 – mJ Turn-Off Switching Loss E off V CE = 400V, I C = 40A, R g = 10Ω, V GE = 15V, inductive load – 0.68 – mJ Total Switching Loss E st V CE = 400V, I C = 40A, R g = 10Ω, V GE = 15V, inductive load – 2.55 – mJ Total Gate Charge Q g V CE = 300V, I C = 20A, V GE = 15V – 100 – nC Gate to Emitter Charge Q ge V CE = 300V, I C = 20A, V GE = 15V – 11 – nC Gate to Collector Charge Q gc V CE = 300V, I C = 20A, V GE = 15V – 52 – nC Electrical Characteristics – FRD (T C = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Units Diode Forward Voltage V fm I F = 20A, T C = 25°C – 1.9 2.6 V Diode Forward Voltage V fm I F = 20A, T C = 125°C – 1.5 – V Diode Reverse Recovery Time T rr I ES = 20A, dI ES /dt = 200A/µs – 32 – ns Diode Reverse Recovery Charge Q rr I ES = 20A, dI ES /dt = 200A/µs – 74 – nC Applications Induction heating UPS (uninterruptible power supply) SMPS (switched-mode power supply) PFC (power factor correction) Package Content 1 x Silan 40N60NPFD Field Stop IGBT Transistor 600V 40A TO-3P DataSheet SGT40N60NPFD

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